Abstract:As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve switching energy & delay at reduced dimensions, allow improved interconnects and provide a complete logic/memory family. However, a viable beyond-CMOS logic technology has remained elusive. Here, we propose a scalable spintronic logic device which operates via spin-orbit transduction combined with magneto-electric switching. The proposed Magneto-Electric Spin Orbit (MESO) logic enables a new paradigm to continue scaling of logic performance to near thermodynamic limits for GHz logic (100 kT switching energy at 100 ps delay). The proposed MESO devices scale strongly and favorably with critical dimensions of the device, showing a cubic dependence of switching energy on size, (E_m proportional to W^3), and square dependence on voltage (E_m proportional to V^2). The excellent scaling is obtained thanks to the properties of the spin orbit effects (e.g. Inverse Spin Hall Effect (ISHE) and Inverse Rashba-Edelstein Effect (IREE)) and the dependence of capacitance on size. The operating voltages for these devices are predicted to be < 100 mV allowing a significant jump ahead of historic trends of scaling voltage with size and corresponding reduction of energy. Interconnect resistance is a critical obstacle for scaling beyond 10 nm dimensions. We project a less detrimental impact of interconnect resistance and show that MESO logic is amenable for highly resistive interconnects (100 <a class="link-external link-http" href="http://uOhm.cm" rel="external noopener nofollow">this http URL</a>-1 <a class="link-external link-http" href="http://mOhm.cm" rel="external noopener nofollow">this http URL</a>) which opens a possibility to use nano-metallic (width < bulk electron mean free path) or doped semiconducting wires (width<5 nm). A scalable, CMOS compatible, non-volatile logic family proposed here may enable the next multi-generational scaling of computing devices.

Complementary logic operation based on electric-field controlled spin-orbit torques

Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Fully electrical controllable spin-orbit torque based half-adder

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Implementation of Complete Boolean Logic Functions in Single Spin–orbit Torque Device

Challenges and Opportunities for Spintronics Based on Spin Orbit Torque

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Reconfigurable Spin Logics and High-density Multistate Memory in a Single Spin-orbit Torque Device

Anomalous Thermal-Assisted Spin-Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory

Spintronic Logic Design Methodology Based on Spin Hall Effect-Driven Magnetic Tunnel Junctions

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Frontiers in all electrical control of magnetization by spin orbit torque

Spintronic logic: from transducers to logic gates and circuits