Abstract:This article presents prime results on process development and optimization of dry etching of silicon carbide (SiC) for via formation and deep etching for SiC-based microsystems. The investigations and corresponding results of the process developments enable the first realization of a full SiC-based technological demonstrator composed of a SiC-interposer with a flip chip mounted deep etched micro electromechanical system (MEMS) SiC Device. By optimizing the process, etch depth of 200 $mu ext{m}$ with an etch rate of up to 2 $mu ext{m}$ /min can be achieved for via etching. In addition, a design of experiments (DoEs) with a total of 29 experiments with seven factors was done to characterize the deep etching of large areas into the SiC. Hereby, vertical sidewalls with low micromasking, low microtrenching and an etch rate of up to 4 $mu ext{m}$ /min could be achieved. The findings and optimized processes were implemented to develop on the one hand a 200-$mu ext{m}$ -thick SiC interposer with copper metallization. On the other hand, a SiC-MEMS Device was manufactured with a deep etched cavity in SiC bulk wafer forming by the end a 50-$mu ext{m}$ thin membrane. The results demonstrate the ability of etching monocrystalline SiC with a high etch rate, enabling new fundamental topologies/structures and packaging concepts for harsh environments MEMSs and high-power electronics. The developed etching technologies demonstrate and enable various applications for 3-D Integration with wide bandgap substrates taking advantage of the superior electrical and mechanical properties of SiC.

Research on deep RIE-based through-Si-via micromachining for 3-D system-in-package integration

Research on deep RIE-based through-si-via micromachining for 3-D system-in-package integration

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication of 3D Packaging TSV using DRIE

A wet process to etch arrayed vias for through silicon via application of 3D packaging

The Simulation Research of DRIE Process

Design and analysis of an I-shaped TSV structure for 3D SiP

Silicon Micromachining Of High Aspect Ratio, High-Density Through-Wafer Electrical Interconnects For 3-D Multichip Packaging

Through wafer via technology for 3-D packaging

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Modelling similarities of Endocrine Disruptors in Pine Needles and Human Breast Milk

Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections

Parametric Study of DRIE Process for Enhancing the Profile-Preserving Property of Square Through Silicon Via

Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

Improvement of Drie Simulation Method for Process Development Application

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications