Abstract:A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm/h, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of MPCVD could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

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