Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

Devender,Rutvik J. Mehta,Kelly Lofgreen,Ravi Mahajan,Masashi Yamaguchi,Theodorian Borca-Tasciuc,Ganpati Ramanath

DOI: https://doi.org/10.1116/1.4906573

2015-03-01

Abstract:Tailoring electrical and thermal contact conductivities (Σc and Γc) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi2Te3 and p-Sb2Te3 influence both Σc and Γc. Cu metallization yields the highest Γc and the lowest Σc, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σc with Sb2Te3 due to p-type nickel telluride formation, which diminishes Σc improvement with n-Bi2Te3 interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.