Valence Disproportionation of GeS in the PbS Matrix Forms Pb 5 Ge 5 S 12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance
Zhong-Zhen Luo,Songting Cai,Shiqiang Hao,Trevor P. Bailey,Hongyao Xie,Tyler J. Slade,Yukun Liu,Yubo Luo,Zixuan Chen,Jianwei Xu,Wenjun Luo,Yan Yu,Ctirad Uher,Christopher Wolverton,Vinayak P. Dravid,Zhigang Zou,Qingyu Yan,Mercouri G. Kanatzidis
DOI: https://doi.org/10.1021/jacs.2c01706
IF: 15
2022-04-14
Journal of the American Chemical Society
Abstract:Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe > PbSe > PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge<sup>2+</sup> substitution in Pb<sup>2+</sup> and discordant off-center behavior; formation of Pb<sub>5</sub>Ge<sub>5</sub>S<sub>12</sub> as stable second-phase inclusions through valence disproportionation of Ge<sup>2+</sup> to Ge<sup>0</sup> and Ge<sup>4+</sup>. PbS and Pb<sub>5</sub>Ge<sub>5</sub>S<sub>12</sub> exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb<sub>5</sub>Ge<sub>5</sub>S<sub>12</sub> increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (κ<sub>lat</sub>) of ∼0.61 W m<sup>-1</sup> K<sup>-1</sup>. The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room-temperature electron mobility of ∼121 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> for 3 × 10<sup>19</sup> cm<sup>-3</sup> carrier density and a ZT of 1.32 at 923 K. This is ∼55% greater than the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT<sub>avg</sub>) of ∼0.76 from 400 to 923 K is the highest for PbS-based systems.
chemistry, multidisciplinary