Interstitial Cu: An Effective Strategy for High Carrier Mobility and High Thermoelectric Performance in GeTe

Liang‐Cao Yin,Wei‐Di Liu,Meng Li,De‐Zhuang Wang,Hao Wu,Yifeng Wang,Lixiong Zhang,Xiao‐Lei Shi,Qingfeng Liu,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adfm.202301750

IF: 19

2023-03-12

Advanced Functional Materials

Abstract:Dense point defects can strengthen phonon scattering, however, inevitably strengthen carrier scattering and deteriorate carrier mobility. Herein, it is demonstrated that the localized interstitial Cu can induce a synergistic effect, leading to high μ (80 cm2 V−1 s−1) and ultralow κl (0.48 W m−1 K−1), thus approaching a high zT of ≈2.3 at 623 K in the Ge0.93Ti0.01Bi0.06Te‐0.01Cu. Dense point defects can strengthen phonon scattering to reduce the lattice thermal conductivity and induce outstanding thermoelectric performance in GeTe‐based materials. However, extra point defects inevitably enlarge carrier scattering and deteriorate carrier mobility. Herein, it is found that the interstitial Cu in GeTe can result in synergistic effects, which include: 1) strengthened phonon scattering, leading to ultralow lattice thermal conductivity of 0.48 W m−1 K−1 at 623 K; 2) weakened carrier scattering, contributing to high carrier mobility of 80 cm2 V−1 s−1 at 300 K; 3) optimized carrier concentration of 1.22 × 1020 cm−3. Correspondingly, a high figure‐of‐merit of ≈2.3 at 623 K can be obtained in the Ge0.93Ti0.01Bi0.06Te‐0.01Cu, which corresponds to a maximum energy conversion efficiency of ≈10% at a temperature difference of 423 K. This study systematically investigates the doping behavior of the interstitial Cu in GeTe‐based thermoelectric materials for the first time and demonstrates that the localized interstitial Cu is a new strategy to enhance the thermoelectric performance of GeTe‐based thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology