Abstract:Resistive random-access memory (RRAM) crossbar arrays have shown significant promise as drivers of neuromorphic computing, in-memory computing, and high-density storage-class memory applications. However, leakage current through parasitic sneak paths is one of the dominant obstacles for large-scale commercial deployment of RRAM arrays. To overcome this issue without compromising on the structural simplicity, the use of inherent selectors native to switching is one of the most promising ways to reduce sneak path currents without sacrificing density associated with the simple two-electrode structure. In this study, niobium oxide (NbOx) was chosen as the resistive switching layer since it co-exhibits non-volatile memory and metal-insulator-transition selector behavior. Experimental results demonstrate abnormal phenomena in the reset process: a rapid decrease in current, followed by an increase when reset from the on state. The current conduction mechanism was examined through statistical analysis, and a conduction filament physical model was developed to explain the abnormal phenomenon. Under optimized operation conditions, non-linearity of ∼500 and fast switching speeds of 30 ns set and 50 ns reset were obtained. The switching behaviors with the intrinsic selector property make the NbOx device an attractive candidate for future memory and in-memory computing applications.

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Retracted Article: High Uniformity and Improved Nonlinearity by Embedding Nanocrystals in Selector-Less Resistive Random Access Memory

Investigating Selectorless Property within Niobium Devices for Storage Applications

1S1R Device with Self-Compliance Property for High Density Cross-Point Memory Applications

High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

Selector-less crossbar array resistive RAM based on TiO 2 fabricated by photochemical metal-organic deposition

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

Rectifying Characteristics and Implementation of N-Si/hfo2 Based Devices for 1D1r-Based Cross-Bar Memory Array

Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices

Highly compact 1T-1R architecture (4F2footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting …

Nb1-xO2 Based Universal Selector with Ultra-high Endurance (> 10(12)), High Speed (10ns) and Excellent V-th Stability

Integrated One Diode-One Resistor Architecture in Nanopillar Siox Resistive Switching Memory by Nanosphere Lithography

Self-Selection RRAM Cell with Sub- $\mu \text{a}$ Switching Current and Robust Reliability Fabricated by High- $K$ /metal Gate CMOS Compatible Technology

Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.

The co-improvement of selectivity and uniformity on NbOx-based selector by Al-doping

Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application

Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure