Abstract:Top Row: (d) TEM micrograph of the TaOx‐based ReRAM element with the TiN electrodes, TaOx switching and Ta oxygen exchange layer. (e) EDX 2D scan of ReRAM stack and V0 layer. Bottom Plots: Measured and the predicted I–V curves of the TaOx memristor device for various NMOS gate voltages (Vg) and electrical conductivity of conducting filament. Memristors, non‐volatile switching memory platform, has recently attracted significant interest, offering unique potential to enable the realization of human brain‐like neuromorphic computing efficiency. Memristors also demonstrate excellent temperature tolerance, long‐term durability, and high tunability with nanosecond pulses, making them highly attractive for neuromorphic computing applications. To better understand the material processing, microstructure, and property relationship of switching mechanisms in memristor devices, computational methodologies, and tools are developed to predict the I–V characteristics of memristor devices based on tantalum oxide (TaOx) resistive random‐access memory (ReRAM) integrated with an n‐channel metal–oxide–semiconductor (NMOS) transistor. A multiphysics model based on coupled partial differential equations for electrical and thermal transport phenomena is solved for the high‐ and low‐resistance states during the formation, growth, and destruction of a conducting filament through SET and RESET stages. These stages effectively represent the migration of oxygen vacancies within an oxide exchange layer. A series of parametric studies and energy minimization calculations are conducted to determine probable ranges for key material and model parameters accounting for the experimental data. The computational model successfully predicted the measured I–V curves across various gate voltages applied to the NMOS transistor in the one transistor one resistance (1T1R) configuration.

Selector-less crossbar array resistive RAM based on TiO 2 fabricated by photochemical metal-organic deposition

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration

Resistive random access memory based on organic-metallic hybrid polymer

A flexible and transparent ReRAM with CdO/TiO2/CdO structure on PET substrate

Enhanced Performance of Self-Selective RRAM Devices in V/TaOx/Pt Structure

Investigation of Self-Selective RRAM Based on V/ITO Structure with Rapid Thermal Annealed ITO for Synapse Emulation

Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory.

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

TiO X -Based Self-Rectifying Memory Device for Crossbar WORM Memory Array Applications

High-Performance InGaZnO-Based ReRAMs

High-performance Ta2O5-based Resistive Random-Access Memory with Embedded Graphene Quantum Dots and Pt-Ag Composite Active Layer

Design Of Selector-Based Insulator-Metal Transition Model For Tio2 Bipolar Resistive Random Access Memory

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5 -based ReRAM devices.

Transition Metal Oxide Thin Films for Nonvolatile Resistive Random Access Memory Applications

Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites.

Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with Excellent Switching Speed and Retention Characteristics

Self-Selective Characteristics of Nanoscale $ \hbox{vo}_{x}$ Devices for High-Density ReRAM Applications

Oxide based two diodes–one resistor structure for bipolar RRAM crossbar array