Abstract:The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Flexible Resistive Switching Device Based on Air-Stable Lead-Free Cu3SbI6 Perovskite Film for Nonvolatile Memory Application

Purely electronic nanometallic ReRAM

Near Room Temperature Multilevel Resistive Switching Memory with Thin Film Ionic Liquid Crystal

Purely electronic nanometallic resistance switching random-access memory

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

High-Performance InGaZnO-Based ReRAMs

Multilevel Resistive Switching With Ionic And Metallic Filaments

Resistance Switching Non-Volatile Random Access Memory and Its Materials

Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites.

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

Resistive Switching Performance of Memristor with Solution-Processed Stacked MO/2D-materials Switching Layers

Performance Enhancement of Nonvolatile Resistive Switching Memory device Made from WO<sub>X</sub>/ZnO Bilayer Structure

Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C–H...N Interaction and Anion Radicals for Stable ReRAM Performance

Simultaneous Implementation of Resistive Switching and Rectifying Effects in a Metal-Organic Framework with Switched Hydrogen Bond Pathway.

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H center dot center dot center dot N Interaction and Anion Radicals for Stable ReRAM Performance