Abstract:Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly for their perspectives toward artificial synapses for neural networks that can emulate neuromorphic visualization and memorize information. Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films

Near Room Temperature Multilevel Resistive Switching Memory with Thin Film Ionic Liquid Crystal

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Resistive random access memory based on organic-metallic hybrid polymer

Purely electronic nanometallic ReRAM

Enhanced resistive switching of silver copper iodide thin films prepared by interfacial phase formation

Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application

Purely electronic nanometallic resistance switching random-access memory

Bioresorbable Resistive Switching Device Based on Organic/Inorganic Hybrid Structure for Transient Memory Applications

Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

Self-Rectifying Gr/TMDC Heterostructures: Candidates for Resistive Switching Memory Devices

Investigation of Multi-Level Cell Characteristic in Amorphous Indium-Gallium-Zinc Oxide Thin-Film-Transistor Based 1T-1R Non-Volatile Memory Device

Room‐Temperature‐Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

Rare earth halide double perovskites for high-performance resistive random access memory

MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time

α-CsPbI3 Quantum Dots ReRAM with High Air Stability Working by Valance Change Filamentary Mechanism.

Multilevel Resistive Switching With Ionic And Metallic Filaments