Near Room Temperature Multilevel Resistive Switching Memory with Thin Film Ionic Liquid Crystal

Wenzhong Zhang,Shingo Maruyama,Kenichi Kaminaga,Y. Matsumoto
DOI: https://doi.org/10.1039/d4tc00796d
IF: 6.4
2024-05-24
Journal of Materials Chemistry C
Abstract:In this study, we demonstrate multilevel operation of nonvolatile resistive random-access memory (ReRAM) devices using thin films of an ionic liquid crystal (ILC), 1-dodecyl-3-methylimidazolium tetrafluoroborate ([C 12 mim][BF 4 ]), as a resistive switching layer. The present ILC-based ReRAMs exhibit bipolar resistive switching behavior between the high resistance state (HRS) and the low resistance state (LRS) in the SmA phase of [C 12 mim][BF 4 ] at near-room-temperature (30 °C) with an endurance of over 50 cycles and retention up to 2000 s. The observed resistive switching behavior of the device is caused by the formation and rupture of conductive filaments composed of trapped charges in the [C 12 mim][BF 4 ] thin film, where the current conduction at the LRS follows the space charge limited current mechanism. Furthermore, the multilevel resistive switching is achieved by controlling the voltage sweep rate and the reset voltage during the voltage sweep with stable endurance and reversibility. These findings demonstrate the potential of ILC-based ReRAMs practically used for, especially neuromorphic devices among memory devices owing to their multilevel resistive switching characteristics.
materials science, multidisciplinary,physics, applied
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