One-Time Programmable Memory Based on ${\rm ZrTiO}_{x}$ Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption

Chia-Chun Lin,Yung-Hsien Wu

DOI: https://doi.org/10.1109/led.2013.2286082

IF: 4.8157

2013-12-01

IEEE Electron Device Letters

Abstract:${\rm TaN}/{\rm ZrTiO}x/{\rm Pt}$ metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of ${\rm O}_{2}$ plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with ${\rm O}_{2}$ plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for OTP memory applications in terms of a low dc switching voltage of 2 V, high programming speed of 60 ns, high read endurance up to $10^{6}$ reading cycles, and desirable retention time and low switching power density of 6.4 ${\rm mW/cm}^{2}$. The memory cell technology not only exhibits the prominent performance which is advantageous over other dielectrics reported in the literature, but it also possesses the capability to from stackable 3-D architecture.

engineering, electrical & electronic