Abstract:As fabrication technology scales towards smaller transistor sizes and lower critical charge, single-event radiation effects are more likely to cause errant behavior in multiple, physically adjacent devices in modern integrated circuits (ICs), and with higher operating frequencies, this risk increasingly impacts design logic over memory as well. In order to increase future system reliability, circuit designers need greater awareness of multiple-transient charge-sharing effects during the early stages of their design flow with standard cell placement and routing. To measure the propagation and observability of multiple transients from single radiation events, this work uses several intra-pipeline combinational logic circuits at the 32nm technology node, investigates several different standard cell placements of each design, and analyzes those placements with a novel, physically realistic transient injection and simulation method. It is shown that (1) this simulation methodology, informed by experimental data, provides an increased realism over other works in traditional fault injection fields, (2) different placements of the same circuit where standard cells are grouped by logical hierarchy can result in different reliability behavior and benefits especially useful within the area of approximate computing, and (3) improved reliability through charge-sharing transient mitigation can be gained with no area penalty and minimal speed and power penalties by adjusting the placement of standard cells.

Design of Standard Cell for Anti-radiation

Overview of radiation hardening techniques for IC design

Test and Verification of 0.13 μm SOI Standard Cell Library Total-Dose Radiation Hardened

Layout Based Radiation Hardening Techniques Against Single-Event Transient

Efficient Aging-Aware Standard Cell Library Characterization Based on Sensitivity Analysis

Radiation-hardened Library Cell Template and Its Total Ionizing Dose (TID) Delay Characterization in 65nm CMOS Process

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

A novel layout automation flow to facilitate test chip design for standard cell characterization

Design Analysis of CMOS Digital Integrated Circuit I/O Cell

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

Frequency-Response-Oriented Design and Optimization of N+ Diffusion Guard Ring in Lightly Doped CMOS Substrate

Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Design of Area-Efficient and Highly Reliable RHBD 10T Memory Cell for Aerospace Applications

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

A Novel Single Event Upset Hardened Cmos Sram Cell

Analysis of Multiple Cell Upset Characteristics for Logical Circuits in Radiation Environment

Standard Cell Library Evaluation with Multiple lithography-compliant verification and Improved Synopsys Pin Access Checking Utility

A Radiation Hardened Clock Inverter Cell with High Reliability for Mitigating SET in Clock Network