Abstract:With the decrease in transistor feature size, power consumption, especially leakage power, has become a most important design concern. Because of their superior electrical properties and design flexibility, fin-type field-effect transistors (FinFETs) seem to be the most promising option in low-power applications. In order to support the VLSI digital system design flow based on logic synthesis, this paper proposes a design method for low-power high-performance standard cells based on IG-mode FinFETs. Such a method is derived on the basis of appropriately and artfully designing and optimizing the stacked structures in each standard cell, and applying the mixed forward and reverse back-gate bias technique in a well-chosen manner. The proposed method is also applicable when the supply voltage reduces to 0.5V to further reduce the leakage power consumption. By applying this design method, optimized IG-mode FinFET standard cells are generated, and they form a low-power high-performance standard cell library. Simulation results of the library cells indicate that the performance of the standard cells designed with the proposed method can be maintained while reducing leakage consumption by a factor of 58.9 at most. The 16-bit ripple carry adder implemented with this library can acquire up to 17.5% leakage power reduction.

Design for Manufacturability of Deep Sub-Micron Standard Cell Library

Design for manufacturability of sub-100 nanometer standard cells

A new DFM flow for sub-loonm standard cells

New DFM flow for sub-100 nm standard cells

A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap Distribution

A novel layout automation flow to facilitate test chip design for standard cell characterization

Critical Area Computation Based On Equidistance Line For Small Layouts

Multiple-Lithography-Compliant Verification for Standard Cell Library Development Flow

Standard Cell Library Design and Optimization Methodology for ASAP7 PDK

Standard Cell Library Evaluation with Multiple lithography-compliant verification and Improved Synopsys Pin Access Checking Utility

Performance-effective compaction of standard cell library for edge-triggered latches utilizing 0.5 micron technology

Design of Low-Power High-Performance FinFET Standard Cells

An Automated System for Checking Lithography Friendliness of Standard Cells

A Customized Low Static Leakage Near/Sub-threshold Standard Cell Library Using Thick-gate Transistors

Development of Standard Cell Library for UMC 0.18 μm Asynchronous Circuit

Sub-threshold standard cell library design for ultra-low power biomedical applications

Development and Verification of A Small Cmos Digital Standard Cell Library Based on Smic 130nm Process

Methodology for standard cell compliance and detailed placement for triple patterning lithography

Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.