Abstract:Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as another critical design factor. Low power design reduces cooling cost and increases reliability especially for high density systems. Moreover, it reduces the weight and size of portable devices. The power dissipation in CMOS circuits consists of static and dynamic components. Since dynamic power is proportional to V2 dd and static power is proportional to Vdd, lowering the supply voltage and device dimensions, the transistor threshold voltage also has to be scaled down to achieve the required performance. In case of static power, the power is consumed during the steady state condition i.e when there are no input/output transitions. Static power has two sources: DC power and Leakage power. Consecutively to facilitate voltage scaling without disturbing the performance, threshold voltage has to be minimized. Furthermore it leads to better noise margins and helps to avoid the hot carrier effects in short channel devices. In this paper we have been proposed the new CMOS library for the complex digital design using scaling the supply voltage and device dimensions and also suggest the methods to control the leakage current to obtain the minimum power dissipation at optimum value of supply voltage and transistor threshold. In this paper CMOS Cell library has been implemented using TSMC (0.18um) and TSMC (90nm) technology using HEP2 tool of IC designing from Mentor Graphics for various analysis and simulations.

A Customized Low Static Leakage Near/Sub-threshold Standard Cell Library Using Thick-gate Transistors

Design of a Smart Leakage Current Protector IC

A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits

Sub-threshold standard cell library design for ultra-low power biomedical applications

Development of TFET 0.13 Μm Standard Cell Library for Ultra-Low Power Applications.

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

CMOS Low Power Cell Library For Digital Design

Design of Low-Power High-Performance FinFET Standard Cells

Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor

A 0.6v Standard Cell Library in 40nm Cmos for Near-Threshold Computing

A novel layout automation flow to facilitate test chip design for standard cell characterization

Design for Manufacturability of Deep Sub-Micron Standard Cell Library

An Algorithm for Reducing Leakage Power Based on Dual-Threshold Voltage Technique

Novel 15T SRAM Cell for Low Voltage High Reliability Application

A 0.3V-to-1.1v Standard Cell Library in 40nm CMOS

Efficient Aging-Aware Standard Cell Library Characterization Based on Sensitivity Analysis

A Leakage Current Suppression Technique for Cascade SRAM Array in 55 Nm CMOS Technology

Static low power verification at transistor level for SoC design

A 64×32bit 4-Read 2-Write Low Power and Area Efficient Register File in 65nm CMOS

A Leakage Power Estimation Method for Standard Cell Based Design

Reliability Evaluation of High-Performance, Low-Power FinFET Standard Cells Based on Mixed RBB/FBB Technique