Abstract:Aging effects (such as Negative Bias Temperature Instability (NBTI)) can cause the temporal degradation of threshold voltage of transistors, and have become major reliability concerns for deep-sub-micron (DSM) designs. Meanwhile, leakage power dissipation becomes dominant in total power as technology scales. While multi-threshold voltage assignment has been shown as an effective way to reduce leakage, the NBTI-degradation rates vary with different initial threshold voltage assignment, and therefore motivates the co-optimizations of leakage reduction and NBTI mitigation. This paper minimizes leakage power during high-level synthesis of circuits with bounded delay degradation (thus guaranteed lifetime), using multi-V-th resource libraries. We first propose a fast evaluation approach for NBTI-induced degradation of architectural function units, and multi-V-th resource libraries are built with degradation characterized for each function unit. We then propose an aging-bounded high-level synthesis framework, within which the degraded delays are used to guide the synthesis, and leakage power is optimized through the proposed aging-aware resource rebinding algorithm. Experimental results show that, the proposed techniques can effectively reduce the leakage power with an extra 26% leakage reduction, compared to traditional aging-unaware multi-V-th assignment approach.

An Algorithm for Reducing Leakage Power Based on Dual-Threshold Voltage Technique

Leakage Power Reduction Through Dual Vth Assignment Considering Threshold Voltage Variation

Signal-Path-Level Dual-VT Assignment for Leakage Power Reduction

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Signal-Path Level Assignment For Dual-V-T Technique

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Behavioral Level Dual-Vth Design for Reduced Leakage Power with Thermal Awareness

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Gate Replacement Techniques For Simultaneous Leakage And Aging Optimization

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Leakage power reduction for CMOS combinational circuits

Study on leakage power estimation and reduction methodology of CMOS circuit

Leakage Power and Circuit Aging Cooptimization by Gate Replacement Techniques

Minimizing Leakage Power In Aging-Bounded High-Level Synthesis With Design Time Multi-V-Th Assignment

An efficient algorithm for estimating gate-level power consumption in large-scale integrated circuits

Negative Design Margin Realization through Deep Path Activity Detection Combined with Dynamic Voltage Scaling in a 55 nm Near-Threshold 32-Bit Microcontroller

Design Methodology for Multipliers with Active Leakage and Dynamic Power Reduction

New Dynamic Threshold MOS Structures for Low-Energy True-Single-Phase-Clocking Circuits