Abstract:The adverse effects of leakage currents and short channel effects (SCE) on mobility degradation in CMOS technology below the 100-nanometer scale. To mitigate these effects, the paper suggests using material engineering techniques to improve the mobility of charge carriers and control SCE effects. Specifically, the switching characteristics of a dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) are enhanced by stacking the gate with various oxide layers including SiO 2 , HfO 2 , and TiO 2 . These oxide layers possess a range of permittivity capabilities from low to high. By combining different oxide layers the proposed device aims to improve its performance. To evaluate the performance of the proposed device we have employ simulation models such as CONMOB (Concentration Dependent Mobility), AUGER (Auger Recombination), and FLMOB (Field Dependent Mobility). These techniques help to obtain the accurate and reliable simulation results. We have utilized the parameters like drain current, transconductance, electric field, I ON , I OFF , and I ON /I OFF and simulate them using the Silvaco TCAD tool. The analysis of these parameters are discussed in the paper we have highlighted the compatibility of the proposed DGMOSFET device for low-power applications. In this paper, we have focus on the improving the switching characteristics of a dual-gate MOSFET by utilizing gate stacks with various oxide layers. The proposed device is evaluated through simulations using concentration-dependent mobility, Auger recombination, and field-dependent mobility techniques. The results indicate that the device is suitable for low-power applications.

Improving Dual V T Technology by Simultaneous Gate Sizing and Mechanical Stress Optimization

Improving dual V

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Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Signal-Path-Level Dual-VT Assignment for Leakage Power Reduction

Improving the Process-Variation Tolerance of Digital Circuits Using Gate Sizing and Statistical Techniques

Leakage Power Optimization for Clock Network Using Dual-Vth Technology

Leakage Power Reduction Through Dual Vth Assignment Considering Threshold Voltage Variation

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Global approach for CMOS circuit optimization by transistor resizing

Minimization of Circuit Delay and Power through Gate Sizing and Threshold Voltage Assignment

Design Optimization of High Performance Strained SOI Dynamic Threshold MOSFET's

An MTCMOS Technology for Low-Power Physical Design

Dual-Vth Leakage Reduction with Fast Clock Skew Scheduling Enhancement

Design and analysis of dual gate MOSFET with spacer engineering

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Gate Oxide and Implantation Process Co-Optimization for Low-Power MCU Applications

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Gate Replacement Techniques For Simultaneous Leakage And Aging Optimization