Abstract:The performance of nanoscale semiconductor technologies has become susceptible to high temperatures and aging phenomena. While guard-bands have conventionally been used to combat degradation-induced timing violations, approximations have recently been leveraged to compensate for degradations in lieu of adding timing guard-bands, without a loss in performance. However, only simple approximation techniques such as truncation have been considered in prior work. In this paper, a wide range of approximate arithmetic circuits including adders and multipliers using various sophisticated approximation techniques are investigated to cope with aging- and temperature-induced degradations. To this end, approximate circuits are first characterized for their delay increase under degradations. With this, we then determine the approximation level required to compensate for guard-bands under different degradations. Degradation-aware logic synthesis results show that the simple use of truncated arithmetic circuits leads to a higher quality loss compared to using other approximate circuits. However, a truncated multiplier has the lowest error distance towards a reliable operation in 10 years. The approximate multipliers with configurable error recovery are most suitable when the level of degradation is higher, e.g., at a temperature of 70 °C. The characterization of degradation at the circuit level is then used for design exploration at the architecture level without the need for further gate-level simulations. For three different image processing applications, experimental results show that guard-bands can be mitigated while maintaining an output result with a high visual quality.

Minimizing Leakage Power In Aging-Bounded High-Level Synthesis With Design Time Multi-V-Th Assignment

Nbti-Aware Dual V-Th Assignment for Leakage Reduction and Lifetime Assurance

Behavioral Level Dual-Vth Design for Reduced Leakage Power with Thermal Awareness

Leakage Power and Circuit Aging Cooptimization by Gate Replacement Techniques

Variation-aware Supply Voltage Assignment for Minimizing Circuit Degradation and Leakage.

Variation-aware Supply Voltage Assignment for Simultaneous Power and Aging Optimization

Gate Replacement Techniques For Simultaneous Leakage And Aging Optimization

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Leakage Power Reduction Through Dual Vth Assignment Considering Threshold Voltage Variation

Parametric Yield-Driven Resource Binding in High-Level Synthesis with Multi-Vth/VddLibrary and Device Sizing

On the efficacy of input Vector Control to mitigate NBTI effects and leakage power

Low Power Aging-Aware On-Chip Memory Structure Design by Duty Cycle Balancing.

Leakage Power Optimization for Clock Network Using Dual-Vth Technology

Characterizing Approximate Adders and Multipliers for Mitigating Aging and Temperature Degradations

Dual-Vth Leakage Reduction with Fast Clock Skew Scheduling Enhancement

Parametric Yield Driven Resource Binding In Behavioral Synthesis With Multi-V-Th/V-Dd Library

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

Accelerated Aging in Analog and Digital Circuits with Feedback

Temperature-dependent Optimization of Cache Leakage Power Dissipation

Leveraging emerging nonvolatile memory in high-level synthesis with loop transformations

Negative Design Margin Realization through Deep Path Activity Detection Combined with Dynamic Voltage Scaling in a 55 nm Near-Threshold 32-Bit Microcontroller