Abstract:With the downscaling of CMOS devices, dynamic variability induced by negative bias temperature instability (NBTI) has become a critical issue. In addition to the time-dependent device-to-device variation (DDV) of NBTI degradation, the cycle-to-cycle variation (CCV) originated from random trap occupation is found non-negligible and should be added into the total dynamic variation. This paper summarizes our recent studies on NBTI-induced dynamic variability, focusing on the CCV effect, with more details on the statistical modeling, circuit reliability simulation methodologies and experimental results. By adding the random trap occupation into consideration, a statistical model for total dynamic variation (DDV+CCV) is proposed. The effective occupancy probability peff is introduced as a key parameter for modeling and circuit reliability simulation. With the statistical trap response (STR) method and modified on-the-fly method, the proposed model is validated by the experimental evidence under both DC and AC NBTI. According to the model and experimental results, circuit reliability simulation framework is proposed for both long-term quasi-static and short-term transient performance evaluation with the additional impact of CCV. Two representative digital circuit units, ring oscillator (RO) and SRAM cell, are simulated under different conditions, indicating it necessary to consider the evident influence of the CCV in accurate circuit reliability evaluation. The results are helpful for the reliability/variability-aware circuit design in nanoscale technology.

Variation-aware Supply Voltage Assignment for Minimizing Circuit Degradation and Leakage.

Variation-aware Supply Voltage Assignment for Simultaneous Power and Aging Optimization

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Nbti-Aware Dual V-Th Assignment for Leakage Reduction and Lifetime Assurance

Minimizing Leakage Power In Aging-Bounded High-Level Synthesis With Design Time Multi-V-Th Assignment

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

On the efficacy of input Vector Control to mitigate NBTI effects and leakage power

Leakage Power Reduction Through Dual Vth Assignment Considering Threshold Voltage Variation

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Improving Dual V T Technology by Simultaneous Gate Sizing and Mechanical Stress Optimization

Process Variation and Temperature-Aware Reliability Management

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Leakage Power and Circuit Aging Cooptimization by Gate Replacement Techniques

Gate Replacement Techniques For Simultaneous Leakage And Aging Optimization

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Leakage Power Optimization for Clock Network Using Dual-Vth Technology

Optimal Logic Architecture and Supply Voltage Selection Method to Reduce the Impact of the Threshold Voltage Variation on the Timing

Signal-Path-Level Dual-VT Assignment for Leakage Power Reduction

Dual-Vth Leakage Reduction with Fast Clock Skew Scheduling Enhancement

Statistical Reliability Analysis under Process Variation and Aging Effects