Abstract:As fabrication technology scales towards smaller transistor sizes and lower critical charge, single-event radiation effects are more likely to cause errant behavior in multiple, physically adjacent devices in modern integrated circuits (ICs), and with higher operating frequencies, this risk increasingly impacts design logic over memory as well. In order to increase future system reliability, circuit designers need greater awareness of multiple-transient charge-sharing effects during the early stages of their design flow with standard cell placement and routing. To measure the propagation and observability of multiple transients from single radiation events, this work uses several intra-pipeline combinational logic circuits at the 32nm technology node, investigates several different standard cell placements of each design, and analyzes those placements with a novel, physically realistic transient injection and simulation method. It is shown that (1) this simulation methodology, informed by experimental data, provides an increased realism over other works in traditional fault injection fields, (2) different placements of the same circuit where standard cells are grouped by logical hierarchy can result in different reliability behavior and benefits especially useful within the area of approximate computing, and (3) improved reliability through charge-sharing transient mitigation can be gained with no area penalty and minimal speed and power penalties by adjusting the placement of standard cells.

Efficient Aging-Aware Standard Cell Library Characterization Based on Sensitivity Analysis

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

A novel layout automation flow to facilitate test chip design for standard cell characterization

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Concurrent device/circuit aging for general reliability simulations

Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology: — New-generation Aging Model and Circuit Reliability Simulator

Reliability Evaluation of High-Performance, Low-Power FinFET Standard Cells Based on Mixed RBB/FBB Technique

Compact Modeling and Simulation of Accelerated Circuit Aging

Sub-threshold standard cell library design for ultra-low power biomedical applications

A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations

Standard Cell Library Evaluation with Multiple lithography-compliant verification and Improved Synopsys Pin Access Checking Utility

Standard Cell Library Design and Optimization Methodology for ASAP7 PDK

Layout-dependent aging mitigation for critical path timing.

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

Statistical Reliability Analysis under Process Variation and Aging Effects

Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods

Design of Standard Cell for Anti-radiation

Global Sensitivity Analysis of Aging Parameters for a Lithium-ion Battery Cell using Optimal Charging Profiles

Design of Low-Power High-Performance FinFET Standard Cells

Implementation of Aging Mechanism Analysis and Prediction for XILINX 7-Series FPGAs with a 28-nm Process

New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology