Abstract:Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as another critical design factor. Low power design reduces cooling cost and increases reliability especially for high density systems. Moreover, it reduces the weight and size of portable devices. The power dissipation in CMOS circuits consists of static and dynamic components. Since dynamic power is proportional to V2 dd and static power is proportional to Vdd, lowering the supply voltage and device dimensions, the transistor threshold voltage also has to be scaled down to achieve the required performance. In case of static power, the power is consumed during the steady state condition i.e when there are no input/output transitions. Static power has two sources: DC power and Leakage power. Consecutively to facilitate voltage scaling without disturbing the performance, threshold voltage has to be minimized. Furthermore it leads to better noise margins and helps to avoid the hot carrier effects in short channel devices. In this paper we have been proposed the new CMOS library for the complex digital design using scaling the supply voltage and device dimensions and also suggest the methods to control the leakage current to obtain the minimum power dissipation at optimum value of supply voltage and transistor threshold. In this paper CMOS Cell library has been implemented using TSMC (0.18um) and TSMC (90nm) technology using HEP2 tool of IC designing from Mentor Graphics for various analysis and simulations.

Development of TFET 0.13 Μm Standard Cell Library for Ultra-Low Power Applications.

Sub-threshold standard cell library design for ultra-low power biomedical applications

A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits

Research on low power technology based on Multi Bit Flip Flop

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Design of Low-Power High-Performance FinFET Standard Cells

A Customized Low Static Leakage Near/Sub-threshold Standard Cell Library Using Thick-gate Transistors

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

CMOS Low Power Cell Library For Digital Design

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Design of Digital Standard Cell Based on Silicon Tunnel Field-Effect Transistor

Design of TFET based Op-Amp and CCII for low voltage and low power applications

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices

Combinational Access Tunnel FET SRAM for Ultra-Low Power Applications

Benchmarking Tfet From A Circuit Level Perspective: Applications And Guideline