Abstract:Background: The insatiable need for low-power and high-performance integrated circuit (IC) results in the development of alternative options for metal oxide semiconductor field effect transistor (MOSFET) in the ultra-nanoscale regime. The practical challenge of the device scaling limits the use of MOSFET for future technology nodes. ICs are equipped with billions of transistors whose size must be scaled while increasing performance. As the size of the transistor shrinks for the new technology node, the control of the gate over the channel also reduces, leading to sub-threshold leakage. The non-planar technology is the potential methodology to design the ICs for the future technology nodes. The fin-shaped field effect transistor (FinFET) is the most valuable non-planar technology. High sub-threshold slope, better short channel effect (SCE) control, high current drive strength, low dopant-prompted variations, and decreased power dissipation are the prominent features of FinFET technology. Objective: FinFET is an advanced version of MOSFET in terms of geometrical structure. Therefore, in this review paper, the different geometrical structures, working operations, design challenges, future aspects, and the different configurations of FinFETs are presented. The performance of the different configurations of a 1-bit full adder is evaluated and compared. Methods: An overview of FinFET evolution from the planar MOSFET, along with its architecture supported by the requisite equations, is presented in the paper. Besides this, it also gives an insight into the circuit simulation using the FinFETs for the process voltage temperature (PVT) variations, width quantization, design challenges, and the future of FinFETs. A comparative study of FinFET-based 1-bit full adder using various techniques is done to compute and compare the leakage power, delay, and power delay product (PDP). Results: The full adders using FinFETs show less leakage power and PDP. The AND-OR logicbased hybrid full adder using FinFETs shows the least energy consumption per switching. Fin- FET-based gate diffusion input adder shows a 74 % reduction in dynamic power compared to the full adder using MOSFET technology. The low power FinFET-based full adder shows a 54.16 % reduction in leakage power compared to the MOSFET-based full adder. The results signify the effect of multi-gates in curbing the leakage power dissipation. Conclusion: MOSFET faces the practical challenge of device scaling and SCEs at lower technology nodes. It initiates the multi-gate technology for future system generation. FinFET has the capability to design low-power and high-performance circuits in an ultra-nanoscale regime. The geometrical structure of FinFET plays a key role to improve the performance metrics in an ultrananoscale regime.

A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology

22Ffl: A High Performance and Ultra Low Power Finfet Technology for Mobile and Rf Applications

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

Review of the Nanoscale FinFET Device for the Applications in Nano-regime

Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

Design of Low-Power High-Performance FinFET Standard Cells

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Finfet Gate Etch Towards 16nm Node CMOS Technology

Ultralow-power High-Speed Flip-Flop Based on Multimode FinFETs

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application

Scallop-shaped p-type FinFETs with improved short-channel effects immunity and driving current

Design and Analysis of 18 nm FinFET Device with High Density Meshing for High-speed and Ultra-low Power Applications

A 22nm FDSOI Technology Optimized for RF/mmWave Applications

Low Power Adiabatic Logic Based on FinFETs

High-Density FinFET One-Time Programmable Memory Cell With Intra-Fin-Cell-Isolation Technology

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs

Design and Simulation of FinFET based digital circuits for low power applications