Abstract:Historically, VLSI designers have focused on increasing the speed and reducing the area of digital systems. However, the evolution of portable systems and advanced Deep Sub-Micron fabrication technologies have brought power dissipation as another critical design factor. Low power design reduces cooling cost and increases reliability especially for high density systems. Moreover, it reduces the weight and size of portable devices. The power dissipation in CMOS circuits consists of static and dynamic components. Since dynamic power is proportional to V2 dd and static power is proportional to Vdd, lowering the supply voltage and device dimensions, the transistor threshold voltage also has to be scaled down to achieve the required performance. In case of static power, the power is consumed during the steady state condition i.e when there are no input/output transitions. Static power has two sources: DC power and Leakage power. Consecutively to facilitate voltage scaling without disturbing the performance, threshold voltage has to be minimized. Furthermore it leads to better noise margins and helps to avoid the hot carrier effects in short channel devices. In this paper we have been proposed the new CMOS library for the complex digital design using scaling the supply voltage and device dimensions and also suggest the methods to control the leakage current to obtain the minimum power dissipation at optimum value of supply voltage and transistor threshold. In this paper CMOS Cell library has been implemented using TSMC (0.18um) and TSMC (90nm) technology using HEP2 tool of IC designing from Mentor Graphics for various analysis and simulations.

A 0.3V-to-1.1v Standard Cell Library in 40nm CMOS

A 0.6v Standard Cell Library in 40nm Cmos for Near-Threshold Computing

A High-Performance Wordline Voltage-Generating System for Low-Power Low-Voltage Flash Memory

A Low-Power Voltage Reference Source for Lithium Battery Protection ICs

Sub-threshold standard cell library design for ultra-low power biomedical applications

Bandgap Voltage Reference Design with Enhanced Tolerance of Process Variations

CMOS Low Power Cell Library For Digital Design

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

A 65 nm CMOS Analog Programmable Standard Cell Library for Mixed-Signal Computing

Development of TFET 0.13 Μm Standard Cell Library for Ultra-Low Power Applications.

Low-power CMOS digital design

A Customized Low Static Leakage Near/Sub-threshold Standard Cell Library Using Thick-gate Transistors

Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology.

Design of Area-Efficient GHz Range Current Mode Frequency Synthesizer Using Standard CMOS Technology

Novel 15T SRAM Cell for Low Voltage High Reliability Application

Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

Implementation of Low Power Strategies in a Base-band Chip in 40nm CMOS Technologies

An Ultra-Low-power 1 Kb Sub-Threshold SRAM in the 180 Nm CMOS Process

A Ultra Low Power Dissipation CMOS Bandgap Reference

Efficient Aging-Aware Standard Cell Library Characterization Based on Sensitivity Analysis

A 1V Supply, 81nW, 800mv Bandgap Reference Voltage Circuit for Low Power Devices