Abstract:Through-silicon-vias (TSVs) can potentially be used to implement inductors in 3-D integrated systems for minimal footprint and large inductance. However, different from conventional 2-D spiral inductors, TSV inductors are fully buried in the lossy substrate, thus suffering from low quality factors. In this paper, we systematically examine how various process and design parameters affect their performance. A few interesting phenomena that are unique to TSV inductors are observed. We then propose a novel shield mechanism utilizing the microchannel, a technique conventionally used for heat removal, to reduce the substrate loss. The technique increases the quality factor and inductance of the TSV inductor by up to and , respectively. Finally, since full-wave simulations of 3-D structures are time-consuming, we develop a set of compressed sensing-based design strategies for microchannel-shielded TSV inductors, which only requires a minimal number of simulations. It enables us to implement microchannel-shielded TSV inductors of up to reduced area compared with spiral inductors of the same design specs (quality factor, inductance, and frequency). To the best of our knowledge, this is the very first in-depth study on TSV inductors to make them practical for high-frequency applications. We hope our study shall point out a new and exciting research direction for 3-D integrated circuit designers.

Characterization of corner/edge effects of through silicon via arrays and layout optimization in 3D integrated circuits

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

On the Efficacy of Through-Silicon-Via Inductors

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Electrothermal modelling of through silicon via (TSV) interconnects

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

TSV inductor optimization and its design implication

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Capacitive coupling analysis of TSV array in 3D packaging

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Crosstalk Noise of Octagonal TSV Array Arrangement Based on Different Input Signal

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Study on the Noise Coupling and Shielding Between Through Silicon Vias

Optimization of 3D IC Routing Based on Thermal Equalization Analysis

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration