Abstract:While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density Dit of 6 × 1011 cm-2 eV-1 between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 107. Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications.

Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics

Liquid Metal Oxide-Assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration

Scalable Integration of Hybrid High-Κ Dielectric Materials on Two-Dimensional Semiconductors

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2

Reliability of Ultrathin High-κ Dielectrics on Chemical-vapor Deposited 2D Semiconductors

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Stable alkali halide vapor assisted chemical vapor deposition of 2D HfSe2 templates and controllable oxidation of its heterostructures

Ultraflat Single-Crystal Hexagonal Boron Nitride for Wafer-Scale Integration of a 2D-Compatible High-Κ Metal Gate

Exfoliation of 2D van der Waals crystals in ultrahigh vacuum for interface engineering

Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Novel 2DEG System at the HfO 2 /STO Interface

Ultra-clean assembly of van der Waals heterostructures

Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices