Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

Controllable Deposition of Polyimide Insulation Layer by an Engineered Stepped Pre-curing Method in Double-sided TSV Processes

A Novel Manufacturing Scheme for Tsvs with Porous Polymer Insulation Liners

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Covalently Formation of Insulation and Barrier Layers in High Aspect Ratio TSVs

Electroless Grafting of Polymer Insulation Layers in Through-Silicon Vias

Polymer Liner Formation in High Aspect Ratio Through-Silicon-Vias for 3-D Integration

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

A Wet Process to Fabricate Silicon Oxide Layer for Through-Silicon-via Insulator Application

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

High aspect ratio and low capacitance through-silicon-vias (TSVs) with polymer insulation layers

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Chemical Metallization of Ultrathin Polymer Insulation Film for Through-Silicon Via Application

Fabrication of Ultra-Fine Micro-Vias in Non-Photosensitive Polyimide for High-Density Vertical Interconnects

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via