Broadband and Low-Loss Metamaterial Silicon Nitride Edge Coupler

An He,Jinlong Xiang,Yaotian Zhao,Yuchen Yin,Yvjia Zhang,Xuhan Guo,Yikai Su

DOI: https://doi.org/10.1364/ofc.2024.m1j.2

2024-01-01

Abstract:We report a SiN edge coupler based on metamaterial structure with simple fabrication process, the coupling loss with SMF is 1.60/2.21 dB at 1310/1550 nm. The loss is smaller than 1.86/2.80 dB in O/S+C+L band.

What problem does this paper attempt to address?

Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

Yunfei Fu,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu,Qingbo Li

DOI: https://doi.org/10.1364/iont.2012.if2a.6

2012-01-01

Abstract:CMOS-compatible broad-band and efficient edge couplers are presented in this paper. The couplers are based on SiON ridge waveguides and silicon inverted tapers, no requirement on partially etching in fabrication processes. The measured coupling losses of ~ 2dB are proved with the calculation results, the broad-band range of more than 100nm range.
CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Zhen Wang,Jin Zhang,Lei Zhang,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.3390/mi14010066

IF: 3.4

2022-01-01

Micromachines

Abstract:Edge coupler is a key component of silicon-based optoelectronic chips, which dramatically reduces the coupling loss between fibers and transmission waveguides. Here, we propose an ultralow-loss three-step silicon edge coupler based on a 130 nm CMOS process. By replacing the silicon substrate with a material with a lower refractive index than silicon oxide, the silicon leakage loss and polarization-dependent loss can be significantly improved. This structure avoids the existence of a cantilever, which enhances the mechanical strength of the edge coupler. Coupling with standard single-mode fiber, the simulation results demonstrate that the TE/TM mode has an ultralow loss of 0.63/1.08 dB at 1310 nm and 0.57/1.34 dB at 1550 nm, and the 0.5 dB bandwidth covering the entire communication band is about 400 nm. In the entire communication band, the polarization-dependent loss is less than 0.8 dB. Furthermore, we propose a taper shape design method based on mode analysis, which can be adapted for any taper to improve its compactness. Compared with the parabolic shape, the coupling loss of the edge coupler with a length of 460 μm for the TE mode is improved by 0.3 dB on average, this edge coupler provides a feasible solution for fiber-to-chip coupling and is perfectly suitable for wavelength division multiplexing applications in optical communications.
Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Yang Jiang,Zhewei Zhang,Peng Liu

DOI: https://doi.org/10.1109/jphot.2024.3379563

IF: 2.4

2024-04-03

IEEE Photonics Journal

Abstract:Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent sub-wavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. Such a structure can be fabricated on 8-inch silicon photonics pilot lines and doesn't require special fabrication processes for making it suspended. We simulate the minimum TE/TM light coupling loss from a standard SMF-28 fiber to be 0.61 dB/0.95 dB with polarization dependent loss (PDL) less than 0.4 dB in the whole band between 1500 nm and 1600 nm.

engineering, electrical & electronic,optics,physics, applied
A Theoretical Sub-0.1 Db Loss Single Mode Fiber-To-Chip Edge Coupler for Silicon Nitride Waveguides

Di Wu,Wei Yan,Yucong Yang,Xiaoyi Song,Zixuan Wei,Jun Qin,Longjiang Deng,Lei Bi

DOI: https://doi.org/10.3390/photonics10030231

IF: 2.536

2023-01-01

Photonics

Abstract:A low loss optical interconnection between optical fibers and photonic integrated circuits is critical for high performance photonic systems. In the past decade, spot size converters, subwavelength waveguide grating (SWG) structures, and different refractive index materials have been applied to allow efficient coupling between the fiber and the photonic chips. However, it is still challenging to achieve low-loss coupling when interfacing high index contrast waveguides such as SiN with SMF-28 fibers. In this work, we report a multilayer edge-coupler using SiOxN materials with different indices to allow for efficient edge coupling between SMF-28 fiber and SiN single mode waveguides. A coupling loss of 0.068 dB for the TM mode was achieved theoretically at a 1550 nm wavelength, with a 1 dB alignment tolerance offset of 2.4 μm.
Broadband and easily fabricated double-tip edge coupler based on thin-film lithium niobate platform

Wanghua Zhu,Chunyu Deng,Dongyu Wang,Qichao Wang,Yaohui Sun,Jin Wang,Binfeng Yun,Guohua Hu,Yiping Cui

DOI: https://doi.org/10.1016/j.optcom.2024.131031

IF: 2.4

2024-08-30

Optics Communications

Abstract:Due to the significant difference in spot size between lithium-niobate-on-insulator (LNOI) waveguide and fiber, there is a substantial coupling loss between them, which limits the interconnection and application of LN photonic chips. Although some LNOI edge couplers have been designed and fabricated with low coupling loss between chip and fiber, they require high etching accuracy. In this paper, a low-loss, broadband and easily fabricated edge coupler is designed and fabricated on the LNOI platform. To reduce the etching requirement for tip width, a design has been adopted with symmetrical double tips at the edge. Additionally, a multimode interferometer (MMI) is introduced to ensure large fabrication tolerance. The proposed design only requires a single full etching step, significantly reducing stringent requirements for process with high precise. Experimental results demonstrate that the device exhibits a coupling loss less than 3.5 dB/facet in the wavelength range of 1500 to 1640 nm, while achieving a low coupling loss of 2.71dB /facet at 1550 nm.

optics
High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Lin Liu,Lidan Zhou,Chunchuan Yang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1364/ol.42.003391

IF: 3.6

2017-01-01

Optics Letters

Abstract:The chip-fiber grating coupler is a fundamental building block in integrated photonics, providing convenient on-wafer testing and packaging. Couplers based on a silicon nitride (SiNx) material platform can achieve wider bandwidths than silicon-based couplers, but suffer from lower efficiency due to the relative low material refractive index. The efficiency of the SiNx grating coupler can be improved by using high-reflectivity silicon grating reflectors underneath. However, such a silicon grating reflector requires several fabrication steps, including lithography, etching, high precision alignment (HPA), and chemical mechanical polishing (CMP). In this Letter, we demonstrate an easy-to-fabricate SiNx-on-SOI transverse-electric mode grating coupler requiring only one patterning step (grating alone), and without the need for HPA and CMP. A coupling coefficient of -2.5 dB and 1-dB-bandwidth of 65 nm has been experimentally measured.
Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Defen Guo,Tao Chu

DOI: https://doi.org/10.1364/OL.43.004795

IF: 3.6

2018-01-01

Optics Letters

Abstract:We proposed and experimentally demonstrated a compact, broadband, and low-loss-mode-evolution-based 2 x 23 dB coupler on a silicon-on-insulator platform. The waveguide widths and separations of the coupler were tapered in an optimal manner using the shortcuts to the adiabaticity method. The coupler, with a similar to 70 mu m total length and 200 nm feature size, exhibited <0.3 dB measured excess loss over a broadband wavelength range from 1500 to 1600 nm. Balanced and unbalanced Mach-Zehnder interferometers fabricated for validation showed extinction ratios larger than 27 and 23 dB, respectively, over a 100 nm bandwidth. The extracted splitting ratio was between 0.48 and 0.52. (C) 2018 Optical Society of America
Ultracompact Fiber-to-Chip Metamaterial Edge Coupler

An He,Xuhan Guo,Ting Wang,Yikai Su

DOI: https://doi.org/10.1021/acsphotonics.1c00993

IF: 7

2021-01-01

ACS Photonics

Abstract:Compact fiber-to-chip light coupling with low loss and large bandwidth, SMF-to-chip edge coupler in particular, is extensively demanded in integrated photonics. The inescapable challenge of edge coupler is the difficulty and complexity in fabrication and packaging. During the past decades, metamaterials have manifested marvelous talent in integrated photonics. Here, we experimentally demonstrate an ultracompact edge coupler via metamaterial for SMF with a mode field diameter of 10 mu m, which is fully based on silicon-on-insulator material and a CMOS compatible fabrication process. In this work, we theoretically analyze the coupling performance and the fabrication difficulty. The experimental results show that this metamaterial-based coupler possesses low coupling loss and broad bandwidth simultaneously with the coupling length of only 90 mu m. At 1550 nm, the coupling losses are 2.22/2.53 dB/facet for the fundamental TE/TM mode, while the minimum average loss could reach 1.81 dB/facet. The measured bandwidth with a loss below 3 dB is as broad as 120 nm, covering the entire C/L band. Moreover, this prominently eased fabrication process potentially exhibits significant superiority in both research and industrial applications.
A Compact Adiabatic Silicon Photonic Edge Coupler Based on Silicon Nitride/Silicon Trident Structure

Xin Mu,Sailong Wu,Lirong Cheng,Xin Tu,H. Y. Fu

DOI: https://doi.org/10.1109/ICOCN.2019.8934126

2019-01-01

Abstract:We propose a novel compact adiabatic fiber-to-chip edge coupler based on a silicon nitride/silicon trident structure. The edge coupler can achieve high coupling efficiency up to 81% (namely 0.91 dB) with 3.2-μm lensed fiber in an ultra-broad bandwidth covering both the O-band and the C-band. It enables adiabatic mode conversion with a total length as short as 80 μm. The silicon nitride/silicon edge coupler is compatible with CMOS process and fabrication tolerance is also analysed for future fabrication and measurement.
Low Loss, Large Bandwidth Fiber-Chip Edge Couplers Based on Silicon-on-Insulator Platform

An He,Xuhan Guo,Kangnian Wang,Yong Zhang,Yikai Su

DOI: https://doi.org/10.1109/jlt.2020.2995544

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:Fiber-chip edge couplers are extensively used in integrated silicon photonic for the coupling of light between optical fibers and planar silicon waveguide circuits. Here, we experimentally demonstrate three kinds of edge couplers with eased fabrication process, two fork shape, and one dual-trident SWG shape, based on Silicon-on-Insulator platform. A commercial lensed fiber with mode field diameter of 6 μm is used. The coupling performance and fabrication tolerance are theoretically analyzed and verified by 3D-FDTD simulation. The experimental results show that these edge couplers pose low coupling losses and large bandwidths simultaneously. At the wavelength of 1.55 μm, the coupling losses are 1.25 dB/facet, 1.49 dB/facet, 1.82 dB/facet for fork1, fork2, and dual-trident SWG couplers, respectively. The measured wavelength bandwidths in which the loss below 2 dB are 114 nm, 102 nm, 92 nm, respectively.
Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet

R. Tummidi,M. Webster

DOI: https://doi.org/10.1109/GROUP4.2019.8853932

2019-08-01

Abstract:We experimentally demonstrate <0.5 dB coupling loss with <0.3 dB variation over the O-band for both polarizations between an integrated silicon photonics platform with an as-diced edge facet and butt-coupled standard single mode fiber.

Engineering,Materials Science,Physics
Fabrication-friendly High-Efficiency Silicon Nitride Grating Coupler

Pengfei Xu,Yanfeng Zhang,Zengkai Shao,Lin Liu,Lidan Zhou,Chunchuan Yang,Yujie Chen,Siyuan Yu

DOI: https://doi.org/10.1109/cleopr.2017.8118727

2017-01-01

Abstract:Grating coupler, as one of the key components can provide convenient on-wafer testing and packaging for integrated photonics. Silicon nitride (SiNx) grating coupler suffers from lower efficiency due to the relative low material refractive index. The efficiency of SiNx grating coupler can be improved by using high reflectivity silicon grating reflectors underneath. However, such silicon grating reflector requires several fabrication steps, including lithography, etching, high precision alignment (HPA), and chemical mechanical polishing (CMP). In this work, we demonstrate an easy-to-fabricate SiNx grating coupler only requiring a single patterning step without the need of HPA and CMP. A coupling coefficient of -2.5 dB and 1-dB-bandwidth of 65 nm have been experimentally measured.
High-Performance Silicon Nitride Fork-shape Edge Coupler

Xin Mu,Sailong Wu,Lirong Cheng,Xin Tu,H. Y. Fu

DOI: https://doi.org/10.1364/fio.2019.jtu3a.66

2019-01-01

Abstract:We propose a fork-shape edge coupler based on silicon nitride for silicon photonic platform. The coupler exhibits low coupling loss, compact size and relaxed misalignment tolerance for both TE and TM modes.
Integrated Broadband Filter with Sharp Transition Edges Based on SiN and SiON Composite Waveguide Coupler

Xiao Ma,Qiongchan Shao,Jiamei Gu,Tingting Lang,Xiang Guo,Jian-Jun He

DOI: https://doi.org/10.3390/photonics10111285

IF: 2.536

2023-01-01

Photonics

Abstract:Broadband filters with sharp transition edges are important elements in diverse applications, including Raman and fluorescence spectral analysis, wideband wavelength-division multiplexing (WDM), and multi-octave interferometry. While the multi-layer thin-film interference broadband filter has been widely applied in various free-space optical systems, its integrated counterpart is still far from mature, which is also highly desired for constructing chip-scale miniature optical modules. In this article, we design, fabricate, and characterize an integrated broadband filter with sharp transition edges. An adiabatic coupler based on silicon nitride (SiN) and silicon oxynitride (SiON) composite waveguide is employed here. Long-pass, short-pass, band-pass, and band-stop filters can be realized in a single design of the composite waveguide coupler for a specific wavelength range, with only a difference in the SiN taper waveguide width. Experimental results with a roll-off value of larger than 0.7 dB nm−1 and a 15 dB extinction ratio (ER) are presented.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Low-loss and high stability standard single mode fiber edge couplers for silicon photonics

Jiyao Yu,Bojin Pan,G. Cao,Junbo Feng,Yu Li,Bowen Li

DOI: https://doi.org/10.1117/12.2652019

2023-01-23

Abstract:Efficient optical coupling between standard single mode fibers and nanophotonic waveguides has been recognized as a major practical challenge since the early years of photonics. In this work, a low-loss and wide band edge coupler based on subwavelength gratings (SWG) for standard single mode fibers is proposed and demonstrated on 220 nm SOI platform. The edge coupler has a minimum feature size of 130 nm and a 630-m length, which was fabricated in CUMEC’s 200 mm CMOS production facilities. The best coupling losses are 1.60 and 1.95 dB for TE and TMin1500-1600 nm wavelength range, respectively, achieving a minimum PDL of 0.2 dB at 1500 nm. Moreover, by taking advantage of SiN-on-Si integrated process and wafer bonding process, the edge coupler exhibits high process and package reliability, making it attractive for the commercial application.

Engineering,Physics
A low-loss, compact, broadband, polarization insensitive edge coupler for silicon photonics

A. Dewanjee,M. Mojahedi,J. N. Caspers,D. F. V. James

DOI: https://doi.org/10.1109/IPCON.2014.6995499

2014-12-29

Abstract:We present the design of a broadband, compact, and low loss two level inverse taper edge coupler for silicon photonics. The polarization maintaining taper has less than 1 dB coupling loss from fiber to silicon waveguide and efficiently couples to both TE and TM polarizations.

Engineering,Materials Science,Physics
Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Xiaoyan Liu,Lin Han,Xiaoke Ruan,Tao Chu

DOI: https://doi.org/10.1364/OL.494537

IF: 3.6

2023-01-01

Optics Letters

Abstract:We demonstrated a SiN-SiN-Si three-layer silicon waveguide crossing with low-loss crossings and interlayer couplers. The underpass and overpass crossings exhibited ultralow loss (< 0.82/1.16 mdB) and cross talk (<-56/-48 dB) in the wave-length range of 1260-1340 nm. To reduce the loss and length of the interlayer coupler, a parabolic interlayer coupling structure was adopted. The measured interlayer coupling loss was less than 0.11 dB from 1260 to 1340 nm, which is, to the best of our knowledge, the lowest loss reported for an interlayer coupler based on a SiN-SiN-Si three-layer plat-form. The total interlayer coupler length was only 120 & mu;m.& COPY; 2023 Optica Publishing Group
Broadband and High-Performance Devices for the Silicon and Silicon-Nitride Platforms

I. Molina-Fernandez,Robert Halir,A. Ortega-Monux,J. G. Wanguemert-Perez,Yang Chen,Jian-Jun He,Pavel Cheben,Jens H. Schmid,T. Dominguez Bucio,Ali Z. Khokhar,M. Banakar,K. Grabska,Frederic Y. Gardes

DOI: https://doi.org/10.1109/icton.2017.8024925

2017-01-01

Abstract:The increasing demand for higher data rates and small form factor equipment for optical networks is fuelling research on integrated optical devices with small footprint and broad bandwidth. Here, we present novel design approaches for grating couplers in the silicon and silicon nitride platforms that enable broadband operation and highly efficient coupling. Furthermore, we report experimental findings on compact integrated waveguide splitters that provide virtual perfect performance over more than 300 nm of bandwidth at telecom wavelengths.
Ultralow-loss polarization-insensitive silicon nitride-assisted double-etched silicon edge coupler with polarization splitting

Zhen Wang,Huan Zhang,Cun-Zheng Ning

DOI: https://doi.org/10.1364/oe.527904

IF: 3.8

2024-06-14

Optics Express

Abstract:Zhen Wang, Huan Zhang, Cun-Zheng Ning High-performance silicon-based edge couplers for interfacing with standard single-mode fibers encounter significant challenges due to ... [Opt. Express 32, 23803-23811 (2024)]

optics

Broadband and Low-Loss Metamaterial Silicon Nitride Edge Coupler

Broad-band Efficient Edge Couplers for Compact Silicon Photonic Circuits

CMOS-Compatible Ultralow-Loss Three-Step Silicon Edge Coupler with Substrate Substitution in the Whole Communication Band

Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

A Theoretical Sub-0.1 Db Loss Single Mode Fiber-To-Chip Edge Coupler for Silicon Nitride Waveguides

Broadband and easily fabricated double-tip edge coupler based on thin-film lithium niobate platform

High-efficiency Wideband SiNx-on-SOI Grating Coupler with Low Fabrication Complexity.

Compact broadband silicon 3 dB coupler based on shortcuts to adiabaticity.

Ultracompact Fiber-to-Chip Metamaterial Edge Coupler

A Compact Adiabatic Silicon Photonic Edge Coupler Based on Silicon Nitride/Silicon Trident Structure

Low Loss, Large Bandwidth Fiber-Chip Edge Couplers Based on Silicon-on-Insulator Platform

Multilayer Silicon Nitride Based Coupler Integrated into a Silicon Photonics Platform with 0.5 dB Coupling Loss between Standard SMF and the As-Diced Chip Edge Facet

Fabrication-friendly High-Efficiency Silicon Nitride Grating Coupler

High-Performance Silicon Nitride Fork-shape Edge Coupler

Integrated Broadband Filter with Sharp Transition Edges Based on SiN and SiON Composite Waveguide Coupler

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Low-loss and high stability standard single mode fiber edge couplers for silicon photonics

A low-loss, compact, broadband, polarization insensitive edge coupler for silicon photonics

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Broadband and High-Performance Devices for the Silicon and Silicon-Nitride Platforms

Ultralow-loss polarization-insensitive silicon nitride-assisted double-etched silicon edge coupler with polarization splitting