Broadband Polarization-Independent Edge Couplers With High Efficiency Based on SiN-Si Dual-Stage Structure

Yang Jiang,Zhewei Zhang,Peng Liu
DOI: https://doi.org/10.1109/jphot.2024.3379563
IF: 2.4
2024-04-03
IEEE Photonics Journal
Abstract:Silicon nitride (SiN) plays a critical role in silicon photonics because of its lower refractive index, low waveguide loss, broad operating bandwidth and compatibility with complementary metal oxide semiconductor (CMOS) fabrication process. Here, we propose a polarization-independent sub-wavelength grating (SWG) edge coupler with high efficiency based on SiN-Si dual-stage structure with a length of only 315.8 μm. Such a structure can be fabricated on 8-inch silicon photonics pilot lines and doesn't require special fabrication processes for making it suspended. We simulate the minimum TE/TM light coupling loss from a standard SMF-28 fiber to be 0.61 dB/0.95 dB with polarization dependent loss (PDL) less than 0.4 dB in the whole band between 1500 nm and 1600 nm.
engineering, electrical & electronic,optics,physics, applied
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