Abstract:Here, it is demonstrated that Fe‐foil/Mg3(Sb, Bi)2 interface sintered at 1073 K effectively prevented a significant diffusion and realized the dual purpose of realizing both the material's high performance and low interfacial resistance. Coupled with p‐type Bi2Te3, a high‐performance thermoelectric module is fabricated showing a competitive efficiency of 7.1% at the hot‐side temperature of 523 K. Mg3(Sb, Bi)2‐based materials possess excellent room‐temperature thermoelectric performance, while poor interfacial behaviors occur when connected with metal electrodes due to the strong chemical activity and volatility of Mg element. In this study, a high efficiency of 7.1% under a temperature difference of 230 K is achieved in n‐Mg3(Sb, Bi)2/p‐Bi2Te3 thermoelectric module. When changing the interfacial layer from Fe powder to Fe foil, it effectively prevents a significant diffusion of both Mg and Bi elements from the material matrix to the interfacial layer, resulting in an extremely low contact resistivity ≈3.4 μΩ cm2 that is almost one order lower than of that of Fe powder/Mg3(Sb, Bi)2 junction ≈30 μΩ cm2. Particularly, a thin diffusion layer with a width of ≈2 μm is initially observed in the unannealed Fe foil/Mg3(Sb, Bi)2 junction. Even after thermal aging at 573 K for 28 days, the diffusion‐layer width is basically unchanged and its corresponding contact resistivity maintained as low as ≈5.8 μΩ cm2. Overall, this work provides deep insights into interfacial design and paves the way for high‐performance and sustainable low‐grade waste heat recovery.

Investigation of Interfacial Thermal Resistance Between Bi2Te3 Thin Films and Metal Electrodes Via TDTR

Enhanced Interfacial Adhesion and Thermal Stability in Bismuth Telluride/Nickel/Copper Multilayer Films with Low Electrical Contact Resistance

Insights into interfacial thermal conductance in Bi2Te3-based systems for thermoelectrics

Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb)2Te3 Thermoelectric Films

Atomic-Resolution Interfacial Reaction Mechanism between Bi 2 Te 3 -Based Alloys and Ni Electrodes

A Comparative Experimental Study on the Cross-Plane Thermal Conductivities of Nano-Constructed Sb2Te3/(Cu, Ag, Au, Pt) Thermoelectric Multilayer Thin Films

Ni barrier in Bi2Te3-based thermoelectric modules for reduced contact resistance and enhanced power generation properties

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices

Minimization of the electrical contact resistance in thin-film thermoelectric device

Effect of the interface on the mechanical properties and thermal conductivity of bismuth telluride films

Improved contact performance and thermal stability of Co–Ni alloy barrier layer for bismuth telluride-based thermoelectric devices

Enhancing the Thermoelectric Property of Bi2Te3 Through a Facile Design of Interfacial Phonon Scattering

Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

Low Contact Resistivity of Bi2Te3‐Based Films and Metals Interfaces Enabled by Orientation Regulation

Effects of interfacial properties on conversion efficiency of Bi 2 Te 3 -based segmented thermoelectric devices

Insights into Interfacial Thermal Resistance in Bi2Te3/Graphene Composites for Thermoelectric Applications

Interfacial Stability in Bi2Te3 Thermoelectric Joints

Low Contact Resistivity and Long-Term Thermal Stability of Nb0.8Ti0.2FeSb/Ti Thermoelectric Junction

Screening metal diffusion barriers for thermoelectric Bi0.5Sb1.5Te3

Interfacial Design Contributing to High Conversion Efficiency in Mg3(Sb, Bi)2/Bi2Te3 Thermoelectric Module with Superior Stability

EFFECT OF OPERATING TEMPERATURE ON INTERFACE DIFFUSION AND POWER GENERATION OF BISMUTH TELLURIDE THERMOELECTRIC MODULES