Minimization of the electrical contact resistance in thin-film thermoelectric device

Ming Tan,Wei-Di Liu,Xiao-Lei Shi,Qiang Sun,Zhi-Gang Chen
DOI: https://doi.org/10.1063/5.0141075
IF: 15
2023-06-01
Applied Physics Reviews
Abstract:High electrical contact resistance refrains the performance of thin-film thermoelectric devices at the demonstrative level. Here, an additional Ti contact layer is developed to minimize the electrical contact resistance to ∼4.8 Ω in an as-assembled thin-film device with 50 pairs of p–n junctions. A detailed interface characterization demonstrates that the low electrical contact resistance should be mainly attributed to the partial epitaxial growth of Bi 2 Te 3 -based thin-film materials. Correspondingly, the superlow electrical contact resistance facilitates the applicability of the out-of-plane thin-film device and results in an ultrahigh surface output power density of ∼81 μW cm −2 at a low temperature difference of 5 K. This study illustrates the Ti contact layer that strengthens the contact between Cu electrodes and Bi 2 Te 3 -based thermoelectric thin films mainly through partial epitaxial growth and contributes to high-performance thin-film thermoelectric devices.
physics, applied
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