Enhanced Thermoelectric Properties of Cu 3 SbSe 4 Compounds Via Gallium Doping

Degang Zhao,Di Wu,Boqiang Lin

IF: 3.2

2017-01-01

Energies

Abstract:In this study, the p -type Ga-doped Cu 3 Sb 1− x Ga x Se 4 compounds were fabricated by melting, annealing, grinding, and spark plasma sintering (SPS). The transport properties of Ga-doped Cu 3 Sb 1− x Ga x Se 4 compounds were investigated. As Ga content increased, the hole concentration of Cu 3 Sb 1− x Ga x Se 4 compounds increased, which led to an increase in electrical conductivity. Meanwhile, the Seebeck coefficient of the Cu 3 Sb 1− x Ga x Se 4 compounds decreased as Ga content increased. The extra phonon scattering originating from Ga-doping effectively depressed the lattice thermal conductivity of the Cu 3 Sb 1− x Ga x Se 4 compounds. The ZT value of Cu 3 SbSe 4 markedly improved, which is primarily ascribed to the depressed lattice thermal conductivity and the increased electrical conductivity. The highest ZT value for the Cu 3 Sb 0.985 Ga 0.015 Se 4 compound was 0.54 at 650 K, which is two times higher than that of a pure Cu 3 SbSe 4 compound.