Effect of Se - site Doping on Thermoelectric Properties of Cu2SnSe3 Synthesized by Combustion

Rui MA,Yuyang LI,Guanghua LIU,Jiangtao LI,Yemao HAN,Min ZHOU,Laifeng LI
DOI: https://doi.org/10.13957/j.cnki.tcxb.2017.04.003
2017-01-01
Journal of Ceramics
Abstract:Cu2SnSe3 is a kind of new thermoelectric material with low or no poisonous elements. It has low thermal conductivity and high conductivity. The doping of Cu2SnSe3 can greatly improve the thermoelectricity of Cu2SnSe3, which is expected to be applied near the middle temperature region. The relative density of Cu2SnSe3 bulk material prepared by direct combustion synthesis is over 96%, and the maximum thermoelectricity is 0.48. It is equivalent to the sample prepared by the traditional sintering process. The whole reaction process is completed in a few minutes, thus greatly simplifying the synthesis process. In order to further improve the thermoelectric properties of Cu2SnSe3 materials, the polycrystalline bulk materials were prepared by combustion synthesis method. The effects of doping on the thermoelectric properties were investigated by doping Cu2SnSe3 with S and Te. The results show that the Se doping of S and Te increases the Seebeck coefficient, decreases the thermal conductivity and electrical conductivity, and improves the thermoelectricity value. S doped Cu2SnSxSe3-x samples, when x=0.15 at 773 K temperature to obtain the maximum ZT value of 0.66. Te-doped Cu2SnTexSe3-x samples, the maximum ZT value was 0.40 at a temperature of 773 K at x = 0.05.
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