Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Preparation of HfSiO4 Via Non-Hydrolytic Sol-Gel Method at Low Temperatures

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived HfO2 Thin Films by TiO2 Incorporation

Synthesis, Characterization and Application of Submicron ZrSiO4 Powder Via Sol-Gel-microemulsion-hydrothermal Method

Fabrication and Electrical Characteristics of Ultrathin (Hfo2)(x)(sio2)(1-X) Films by Surface Sol-Gel Method and Reaction-Anneal Treatment

Fabrication of High‐purity HfSi2 Powder Via Molten Salt‐assisted Magnesium Thermal Reduction

High-Pressure and High-Temperature Synthesis and In Situ High-Pressure Synchrotron X-ray Diffraction Study of HfSi2

High-Pressure and High-Temperature Synthesis and In Situ High-Pressure Synchrotron X-ray Diffraction Study of HfSi 2

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Effects of HF Acid on Dissolution of Elemental Si

An innovative method for preparation of sol–gel HfO2 films with high laser-induced damage threshold after high-temperature annealing

Preparation of High Purity Crystalline Silicon by Electro-Catalytic Reduction of Sodium Hexafluorosilicate with Sodium below 180°C

Polymer-derived SiHfN ceramics: From amorphous bulk ceramics with excellent mechanical properties to high temperature resistant ceramic nanocomposites

Preparation of Ti1-xFexO2 Nanocrystals via Low Temperature Sol-Gel Method

Low-temperature Rapid Synthesis of Ultrafine Hafnium Carbide Ceramic Powders

A low temperature MgH2-AlCl3-SiO2 system to synthesize nano-silicon for high-performance Li-ion batteries

Preparation of ZnO‐glass composite hollow fiber and its application in formation of ZIF‐8 membrane

Superhydrophobic and Anti-Icing Properties at Overcooled Temperature of A Fluorinated Hybrid Surface Prepared Via A Sol-Gel Process

A study on the low-temperature wet synthesis of hydrofluoric acid from synthetic calcium fluoride and waste sulfuric acid