Abstract:Sol-gel method is a low-cost material preparation method; however, it is difficult to obtain a stable sol containing easily hydrolyzable metal ions via this method. In this study, a stable hafnium(IV) oxide (HfO 2 ) sol was prepared by adding benzoyl acetone (BzAcH) modifier. Infrared absorption spectroscopy results showed that the BzAcH additive chelated with the Hf 4+ ions in the sol, thus improving the hydrolysis resistance of the HfO 2 sol, which in turn improved its stability. It was also found that the BzAcH-modified HfO 2 gel film exhibited ultraviolet (UV) photosensitivity. After UV exposure, the film did not dissolve easily in organic solvents. Based on these properties, the micro processing of the HfO 2 film was preliminarily explored, and HfO 2 microstructures were successfully obtained. Additionally, the relative permittivity ( epsilon r ) of HfO 2 exhibited minimum (-10.9) and maximum (-20.6) values at heat -treatment (HT) temperatures of 350 and 450 degrees C, respectively. With the continuous increase in the HT temperature, epsilon r first decreased and then increased slightly. Moreover, the current-voltage curves showed that the Pt/HfO 2 /LaNiO 3 (LNO) structure exhibited a pronounced bipolar resistive switching (RS) effect, which was attributed to the fact that LNO could be used as an electrode and an oxygen vacancy (OV 2+ ) storage layer for RS materials. Notably, the oxygen ions in HfO 2 with a low degree of crystallinity are more likely to migrate within its body (which makes it easier to form OV 2+ s), therefore, the "Set" voltage of low -crystallinity HfO 2 films is lower than that of high -crystallinity HfO 2 films. The RS mechanism can be explained by the OV 2+ conductive filament model. These results are of great practical significance for the low-cost preparation of HfO 2 and the application of LNO as an oxide electrode.

An innovative method for preparation of sol–gel HfO2 films with high laser-induced damage threshold after high-temperature annealing

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Time-Dependent Resistance of Sol–Gel HfO2 Films to In Situ High-Temperature Laser Damage

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Preparation of Sol-Gel ZrO2 Films with High Laser-Induced Damage Threshold under High Temperature

Contaminant-free Layer-by-layer Annealing to Improve the Properties of HfO2/SiO2 Optical Films for the Fs Laser

Laser-induced Damage Threshold of Hafnia Thin Films with Chemical Method

Annealing behaviors of structural, interfacial and optical properties of HfO 2 thin films prepared by plasma assisted reactive pulsed laser deposition

HfO2 Thin Films Prepared by Hydrothermal Synthesis

High Laser-Induced Damage Threshold HfO2 Films Prepared by Ion-Assisted Electron Beam Evaporation

Preparation of High Laser-Induced Damage Threshold Ta2O5 Films

Effect of annealing on the properties of plasma-enhanced atomic layer deposition grown HfO 2 coatings for ultraviolet laser applications

Investigation on the Laser-induced Damage Morphology of HfO2/SiO2 Antireflection Films

Hafnia/silica Nanolaminate-Based Design for High Performance Laser Films with Low Optical Loss

Study on Absorbance and Laser Damage Threshold of HfO2 Films Prepared by Ion-Assisted Reaction Deposition

LIDT of HfO 2 /sio 2 HR Films by Different Test Modes at 1064nm and 532Nm

Structural, Optical and Electrical Properties of Hf-doped ZnO Transparent Conducting Films Prepared by Sol–gel Method

Preparation of HfSiO4 Via Non-Hydrolytic Sol-Gel Method at Low Temperatures

Preparation and Patterning of HfO 2 Film Via Sol - Gel Method and Resistive Switching Effect of Pt/HfO 2 /lanio 3

Annealing-Temperature-Modulated Optical, Electrical Properties, And Leakage Current Transport Mechanism Of Sol-Gel-Processed High-K Hfalox Gate Dielectrics

Temperature-dependent Structural Stability and Optical Properties of Ultrathin Hf–Al–O Films Grown by Facing-Target Reactive Sputtering