Polarization-Induced Temperature Instability of HfO2-Based Ferroelectric FET

Chengji Jin,Jiacheng Xu,Jiani Gu,Jiajia Chen,Hongrui Zhang,Huan Liu,Haoji Qian,Bing Chen,Ran Cheng,Yan Liu,Xiao Yu,Genquan Han

DOI: https://doi.org/10.1109/led.2023.3332649

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:We have investigated polarization-induced temperature instability (PTI) of HfO2-based ferroelectric field-effect transistor (FeFET) and reveal its mechanisms. Since the existence of spontaneous polarization in ferroelectric, an internal bias emerges even without applied gate voltage, which results in performance degradation that can be accelerated under high-temperature stress (HTS). By systematically characterizing PTI, we find that FeFET suffers from strong positive PTI including subthreshold swing (SS), on-current ( $\text{I}_{ON}$ ), memory window (MW) and endurance degradation, however, negligible negative PTI is observed. In addition, the evolution of stable and reversible polarization ( $\text{P}_{\text {Sta}}$ and $\text{P}_{\text {Rev}}{)}$ with accumulated time of HTS is captured by quasi-static capacitance voltage (QSCV) method, which indicates the transition from $\text{P}_{\text {Sta}}$ to $\text{P}_{\text {Rev}}$ is responsible for the performance degradation by PTI.