Abstract:The mechanism of memory window (MW) enhancement in ferroelectric thin‐film transistors (FETFTs) with amorphous indium‐gallium‐zinc oxide (a‐IGZO) channels is explored. Electron trapping at the Al‐doped HfO2/a‐IGZO interface hinders ferroelectric switching, particularly with a TiN gate. Replacing the TiN gate with a P++‐Si gate mitigates electron accumulation, enhancing MW in FETFTs. This work investigates the mechanism for the memory window (MW) suppression of the ferroelectric‐thin film transistors (FETFTs) with an amorphous indium‐gallium‐zinc (a‐IGZO) channel. a‐IGZO generally has an n‐type character with a high bandgap (>3 eV) and a high density of gap states, hindering the carrier type inversion. Therefore, the negative ferroelectric (FE) bound charges at the FE layer/a‐IGZO interface must be compensated by the positive charges of the oxygen vacancy in the a‐IGZO layer. In contrast, accumulated electrons can compensate for the positive FE‐bound charges. Such a bound charge compensation mechanism complicates the FETFT operation and precise understanding. Experiments and simulations confirm that feasible FE switching in the bottom‐TiN or P++‐Si/Al‐doped HfO2/a‐IGZO/top‐TiN structure can occur only when the countercharges in the a‐IGZO layer compensate the positive and negative bound charges. More importantly, the Al‐doped HfO2/a‐IGZO interface generally involves electron trapping, which hinders FE switching and achieving a MW for the TiN gate case. When replacing the TiN gate with the P++‐Si gate, the suppressed FE polarization by the depolarization effect from the SiO2 interface layer can mitigate electron accumulation. Consequently, the P++‐Si bottom electrode (BE) is more advantageous than the TiN BE regarding a MW of FETFT.

Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges During Readout

Polarization-Induced Temperature Instability of HfO2-Based Ferroelectric FET

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films Through Interfacial Bound Charges

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Investigation of Read Disturb for Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor

An Analysis of Imprinted Hysteresis Loops for a Ferroelectric Pb(Zr,Ti)O3 Thin Film Capacitor Using the Switching Transient Current Measurements

Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic Applications

Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO2 Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors