Abstract:Influence of dipolar alignments of a ferroelectric poly-vinylidine fluoride trifluroethylene [P(VDF-TrFE)] thin film on the charge mobility and nonvolatile property of ferroelectric field-effect transistors (FeFETs) has been explored. The electrical properties of the ferroelectric microstructures can be tuned by adopting different cooling procedures after annealing the spin-coated ferroelectric polymer P(VDF-TrFE) substrates. For example, a higher degree of alignment of the C–F dipoles in the polymeric chains is observed along the substrate surface for the samples with fast quenching. The dielectric constant of the fast-quenched sample is found to be ∼10 at 1 kHz, while the same is found to be ∼8.5 when the rate of cooling is relatively slower. Furthermore, the fabrication of a metal–insulator–metal capacitor using the fast-quenched substrate leads to a high remnant polarization of Pr ∼ 5.5 ± 0.2 μC/cm2, as compared to that of the normally cooled sample to ∼2.7 ± 0.2 μC/cm2, at an applied field intensity of 200 MV/m. Emergence of such characteristics encouraged the use of P(VDF-TrFE) as a gate dielectric layer, which leads to improved nonvolatile characteristics of the device. The measured charge carrier mobility of FeFETs embedded with a fast-quenched ferroelectric polymer as a gate dielectric is found to be ∼3.4 × 10–2 cm2 V–1 s–1, which is ∼35% higher than the normally cooled samples. The strongly correlated C–F dipoles in the fast-quenched ferroelectric layers lead to the reduction in width of the trap density of states near the semiconductor–dielectric interface. The XPS and UPS characterizations show the formation of a superior transport channel in the semiconductor near its dielectric interface when the fast-quenched polymer is used as the gate dielectric in the FeFETs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00549?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00549</a>.FESEM surface image of normally cooled and fast-quenched ferroelectric polymer thin films; AFM topographic image of CuPc nanoparticles on the Si substrate; band alignment study at the semiconductor–dielectric interface; and P(VDF-TrFE) film vibrational absorbance bands (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00549/suppl_file/el0c00549_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Polarization fluctuation dominated electrical transport processes of polymer based ferroelectric-field-effect transistors

Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook

Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Polarization-Induced Temperature Instability of HfO2-Based Ferroelectric FET

Polarization Control of Electron Tunneling into Ferroelectric Surfaces.

Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition

Polarization Switching in Nanoscale Ferroelectrics

Nanoscale Mapping of Carrier Distribution Regulated by Polarization in 2D FeFETs

Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices

Polarization and Hysteresis in Tubular-Channel Fluoroethylenepropylene-Copolymer Ferroelectrets

Unique features of polarization in ferroelectric ionic conductors

Polarization from Dielectric-Barrier Discharges in Ferroelectrets: Mapping of the Electric-Field Profiles by Means of Thermal-Pulse Tomography

Phase Transition Induced by Thermal and Electric Fields in Electron-Irradiated Poly (vinylidene Fluoride-Trifluoroethylene) Copolymers

Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis

Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Dipolar Alignment in a Ferroelectric Dielectric Layer of FeFETs to Boost Charge Mobility and Nonvolatile Memory

Nanoscale polarization manipulation and imaging in ferroelectric Langmuir-Blodgett polymer films

Poling induced changes in polarization domain structure of polymer ferroelectrics for application in organic thin film transistors

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

Direct Detection of Local Electric Polarization in the Interfacial Region in Ferroelectric Polymer Nanocomposites