Abstract:Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in FE-FETs in conjunction with the ferroelectric to paraelectric transition. The devices offer a test bed to evaluate specific effects of polarization on the electrical processes. FE-FETs have dominant contributions from polarization-fluctuation rather than static dipolar disorder prevalent in high k paraelectric dielectric-based FETs. Additionally, photo-excitation measurements in the depletion mode reveal clear features in the FET response at different temperatures, indicative of different transport regimes.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of polarization fluctuations on the electrical transport process in polymer - based ferroelectric field - effect transistors (FE - FETs). Specifically, the author hopes to understand how these characteristics affect the interfacial charge transport in FE - FETs by studying the influence of temperature changes on the dielectric constant and polarization characteristics of the ferroelectric layer. ### Main problems: 1. **Influence of polarization fluctuations on electrical transport**: The paper discusses the main contribution of polarization fluctuations rather than static dipole disorder to the electrical transport process in FE - FETs. 2. **Temperature - dependent transport mechanism**: By measuring the device performance at different temperatures, the change of the transport mechanism during the ferroelectric - to - paraelectric phase transition is studied. 3. **Photo - excitation measurement**: Photo - excitation measurements are carried out in the depletion mode to reveal the characteristics of the transport mechanism at different temperatures. ### Research background: - FE - FETs are composed of tunable dielectric layers and are used to study the interfacial transport process. - The dielectric constant of ferroelectric materials changes significantly with temperature, especially near the ferroelectric - to - paraelectric phase transition. - These devices provide a test platform to evaluate the specific influence of polarization on electrical transport. ### Key content: - **Polarization fluctuations**: Compared with the static dipole disorder in high - k paraelectric - dielectric - based FETs, polarization fluctuations dominate in FE - FETs. - **Temperature - dependence**: It is found that in the ferroelectric state, the temperature - dependence of the field - effect mobility (\(\mu_{\text{FET}}\)) is weak (activation energy \(E_A < 15 \text{ meV}\)), while in the paraelectric state it becomes strongly temperature - dependent (\(E_A\approx0.4 \text{ eV}\)). - **Double - layer dielectric structure**: By using a double - layer dielectric structure (low - k|high - k), the contributions of thermal processes and polarization to \(\mu_{\text{FET}}\) are distinguished, indicating that the double - layer structure can reduce the influence of polarization fluctuations in single - layer FE - FETs. ### Formula and symbol explanations: - \(P_{\text{tot}} = P_{\text{lin}} + 2P_r - P_{\text{sat}}\): The total polarization includes linear and nonlinear contributions. - \(I_{\text{ds}}=\left(\frac{\mu_{\text{FET}} W C_0}{2L}\right)(V_g + V_0 - V_{\text{th}})^2\): The formula for the drain - source current in the saturation region, where \(C_0\) is the effective capacitance, \(W\) is the channel width, and \(L\) is the channel length. - \(\langle\mu_{\text{FET}}(T)\rangle\): The average field - effect mobility considering polarization fluctuations. Through these studies, the author hopes to reveal the unique behavior of ferroelectric materials in FE - FETs and provide theoretical support for the development of high - performance polymer electronic devices.

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