Abstract:High-performance polysilicon (P-Si) is fundamental as a resource for manufacturing semiconductor devices with high photoelectric properties. However, experimentally characterizing the solidification process in detail has been difficult on account of the extremely rapid cooling rate and limited available characterization methods. Therefore, this study used molecular dynamics (MD) to investigate Si crystallization behavior through directional solidification at different cooling rates. The entire system was first analyzed in terms of energy and radial distribution function, after which the microstructural evolution was characterized by visualization. Results indicated that the cooling rate significantly affected the directional solidification of Si, and an excessively high cooling rate resulted in a decrease in the long-range order of the system. At the same cooling rate, the crystallization rates of (1 0 0), (1 1 0), and (1 1 1) crystal faces followed a descending order. The configurations of the S-L interface with different crystal faces were distinct. Specifically, while the atom numbers of defect structures that were formed in systems of (1 0 0) and (1 1 0) crystal faces were few, those formed in the (1 1 1) crystal face were more. It was difficult for the (1 0 0) crystal face to form dislocations regardless of the crystallization degree at different cooling rates, and the (1 1 0) crystal face only formed a few dislocations at high cooling rates. Dislocations formed at all cooling rates during the directional solidification of the (1 1 1) crystal face, and there was a weak correlation between the number of dislocations and cooling rates. Twinning mainly occurred during the solidification process of the (1 1 1) crystal face, and there was no obvious linear relation between its number and the cooling rate. Moreover, when high-energy dislocations occurred more often, the system stability decreased. Overall, this work will be helpful to understand the commonness and difference in directional solidification of Si with different crystal faces at different cooling rates.

Analysis on Surface Morphology and Defect Generation at the Initial Stages of 6H-Sic Sublimation Growth

Sublimation growth of 6H-SiC single crystal along [1100] direction

Pvt Growth of 6h Sic Crystals and Defect Characterization

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Micropipe Observation in Sublimation 6H-Sic By Optical Microscopy

Homogeneous Growth of 3C-SiC Crystal Surface at Solid–Liquid Interface and Its Competitive Relationship

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology

Hexagonal voids and the formation of micropipes during SiC sublimation growth

Analysis of Structural Development and Defects during the Anisotropic Growth of Silicon

Investigation on the Mechanism of Instability for Step Morphology During 3C-Sic (111) Vicinal Surface Epitaxial Growth

Analysis of Defect Propagation in SiC Crystals Formed by Solution Growth and Sublimation Growth and High Quality SiC Crystal Growth by the Hybrid Method Combining both Growth Techniques

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Effect of 6H-Sic Crystal Growth Shapes on Thermo-Elastic Stress in the Growing Crystal

Investigation of the 6H-Sic （0001） Surface by AFM