National Healthy Schools Programme: Developing the Evidence Base

I. Warwick,A. Mooney,C. Oliver

Abstract:

What problem does this paper attempt to address?

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Q. Fu,H. F. Zhan,Y. T. Gu

DOI: https://doi.org/10.1166/asl.2012.3997

2012-01-01

Advanced Science Letters

Abstract:Molecular dynamics (MD) simulations have been employed to investigate the single-crystal Si properties with different pre-existing cavities under nanoindentation. Cavities with different radii and positions have been considered. It is found that pre-existing cavities in the Si substrate would obviously influence the mechanical properties of Si under nanoindentation. Furthermore, pre-existing cavities would absorb part of the strain energy during loading and then release during unloading. It would decrease plastic deformation to the substrate. Particularly, the larger of the cavity or the nearer of the cavity to the substrate’s top surface, the larger decrease of Young’s modulus and hardness is usually observed. Just as expected, the larger offset of the cavity in the lateral direction, the less influence is usually seen.
On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Jiahao Hu,Yang He,Zhen Li,Liangchi Zhang

DOI: https://doi.org/10.1016/j.wear.2023.204871

IF: 4.695

2023-03-31

Wear

Abstract:SiC is an important semiconductor but is difficult to machine due to its high hardness and low fracture toughness. The deformation mechanisms of SiC subjected to single-point cutting is so far unclear. This paper aims to clarify such mechanisms by carrying out experimental investigations at similar length and load scales to those based on molecular dynamics. To this end, nano-scratching tests were conducted on AFM. Diamond AFM tips of the radius of 10 nm and 60 nm were used as the single-point nano-scratching tool on the surfaces of 4H–SiC and 6H–SiC single crystals with oxide amorphous layer. The nano-grooves were then examined under AFM and SEM, and the damages in the cross-sectional subsurfaces were analyzed by HRTEM. The investigation revealed that under the nano-scratching load less than 20 μN and nano-grooving depth below 10 nm, which are consistent with the conditions used in molecular dynamics analyses, the subsurface deformation was mainly caused by amorphous phase transformation. Dislocations were rarely found and no crack emerged. This study then identified that under nano-scratching, the main mechanism of material removal of a single crystalline SiC is via amorphous phase transformation.

engineering, mechanical,materials science, multidisciplinary
Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Haoxiang Wang,Shang Gao,Renke Kang,Xiaoguang Guo,Honggang Li

DOI: https://doi.org/10.3390/nano12142489

IF: 5.3

2022-07-20

Nanomaterials

Abstract:Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete understanding of the deformation and removal mechanism. In this study, molecular dynamics (MD) simulations were carried out to investigate the origins of the differences in elastic–plastic deformation characteristics of the SiC polytypes, including 3C-SiC, 4H-SiC and 6H-SiC, during nanoindentation. The atomic structures, pair correlation function and dislocation distribution during nanoindentation were extracted and analyzed. The main factors that cause elastic–plastic deformation have been revealed. The simulation results show that the deformation mechanisms of SiC polytypes are all dominated by amorphous phase transformation and dislocation behaviors. Most of the amorphous atoms recovered after completed unload. Dislocation analysis shows that the dislocations of 3C-SiC are mainly perfect dislocations during loading, while the perfect dislocations in 4H-SiC and 6H-SiC are relatively few. In addition, 4H-SiC also formed two types of stacking faults.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

Shuo Zhang,Xiao Cheng,Junyun Chen

DOI: https://doi.org/10.1016/j.apsusc.2022.152944

IF: 6.7

2022-06-01

Applied Surface Science

Abstract:Compared with the conventional orthogonal cutting, the oblique nano-cutting of 6H-SiC by tilting the tool at different angles, i.e., the tool inclination angle, is systematically investigated via molecular dynamics (MD) simulations. Focusing on the deformation mechanism, surface deformation including elastic recovery and deformation layer thickness is studied considering the edge ovalization effect in the cutting plane of oblique cutting. Moreover, the variation of cutting force is also analyzed, which relates to the improvement of processing accuracy and the structural phase transition. In particular, the transition path is clarified by coordination number analysis and virtual X-ray diffraction, which shows that the amorphization process is achieved via an initial transformation from the wurtzite structure to a fivefold coordinated orthorhombic intermediate structure, and then to an amorphous phase. Finally, dislocation analysis reveals that the basal dislocation systems dominate the dislocation behaviors, while in oblique nano-cutting especially at the tool inclination angle of 30°, the dislocation system of {0001} (i.e., the basal 1/3 Shockley partial dislocation of 6H-SiC) is more activated due to the inclined-cutting-edge-derived shear stress. Furthermore, stacking faults are also formed beneath the bottom of cutting grooves due to the slip upon fivefold coordinated atoms plane.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Zhonghuai Wu,Weidong Liu,Liangchi Zhang,Sean Lim

DOI: https://doi.org/10.2139/ssrn.3384328

2019-01-01

SSRN Electronic Journal

Abstract:The amorphization and dislocation evolution mechanisms of a single crystal 6H-SiC were systematically investigated by using nano-indentation, high-resolution transmitted electron microscope (HRTEM), molecular dynamics (MD) simulations and the generalized stacking fault (GSF) energy surface analysis. Two major plastic deformation mechanisms of 6H-SiC under nano-indentation were revealed by HRTEM, i.e., (1) an amorphization region near the residual indentation mark, and (2) dislocations below the amorphization region in both the basal and prismatic planes. MD results showed that the amorphization process corresponds to the first “pop-in” event of the indentation load-displacement curve, while the dislocation nucleation and propagation are related to the consequent “pop-in” events. The amorphization is confirmed to achieve via an initial transformation from wurtzite structure to an intermediate structure, and then a further amorphization process.
Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Xiaoshuang Liu,Rong Wang,Junran Zhang,Yunhao Lu,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1361-6463/ac9535

2022-01-01

Journal of Physics D Applied Physics

Abstract:In this work, the anisotropic deformation and anisotropic mechanical properties of 4H silicon carbide (4H-SiC) single crystal wafers are proposed by using nanoindentation. The C face of a 4H-SiC wafer has higher hardness and lower fracture toughness than those of the Si face. Because the deformation of 4H-SiC is assisted by the nucleation and slip of basal plane dislocations (BPDs), especially the slip of Si-core partial dislocations (PDs) of the BPDs, the nucleation and slip of the Si-core PDs in the Si face of 4H-SiC is easier than those in the C face, which releases the nanoindentation-induced stress and results in the decrease of the hardness and increase of the fracture toughness of the Si face of 4H-SiC wafers. Due to the hexagonal lattice of 4H-SiC, the hardness along < 1<(1)over bar>00 > of 4H-SiC is higher than that along < 11<(2)over bar>0 >, but the fracture toughness along the < 1<(1)over bar>00 > is lower than that along the < 11<(2)over bar>0 >, as a result of the enhanced glide of dislocations along the most closely-packed direction. The insights gained in this work are expected to shed light on the optimization of the mechanical processing of 4H-SiC wafers.
Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Liang Zhao,Junjie Zhang,Jianguo Zhang,Alexander Hartmaier

DOI: https://doi.org/10.1016/j.ceramint.2020.09.078

IF: 5.532

2021-01-01

Ceramics International

Abstract:Deformation-induced characteristics of surface layer strongly rely on loading condition-related operating deformation modes. In the current study we reveal the mechanisms governing machined surface formation of hard brittle monocrystalline 3C–SiC in ultrasonic elliptical vibration-assisted diamond cutting by molecular dynamics simulations. Simulation results show different deformation modes including phase transformation, dislocation activity, and crack nucleation and propagation, as well as their correlations with surface integrity in terms of machined surface morphology and subsurface damage. In particular, molecular dynamics simulations of ordinary cutting are also carried out, which demonstrate the effectiveness of applying ultrasonic vibration of cutting tool in decreasing machining force and suppressing crack events, i.e., promoting ductile-mode cutting for achieving high surface integrity. The physical mechanism governing the machining differences between the two machining processes are also revealed. Furthermore, the effect of cutting depth on machined surface integrity under vibration-assisted cutting and ordinary cutting is addressed.

materials science, ceramics
Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon

Hong-tao Zhu,S.Y. Yu,Hui Wu,B. Lin

DOI: https://doi.org/10.4028/www.scientific.net/MSF.471-472.144

2004-09-30

Abstract:Molecular dynamics (MD) simulation can play a significant role in addressing a number of machining problems at the atomic scale. This simulation, unlike other simulation techniques, can provide new data and insights on nanometric machining; which cannot be obtained readily in any other theory or experiment. In this paper, some fundamental problems of mechanism are investigated in the nanometric cutting with the aid of molecular dynamics simulation, and the single-crystal silicon is chosen as the material. The study showed that the purely elastic deformation took place in a very narrow range in the initial stage of process of nanometric cutting. Shortly after that, dislocation appeared. And then, amorphous silicon came into being under high hydrostatic pressure. Significant change of volume of silicon specimen is observed, and it is considered that the change occur attribute to phase transition from a diamond silicon to a body-centered tetragonal silicon. The study also indicated that the temperature distributing of silicon in nanometric machining exhibited similarity to conventional machining.

Materials Science,Engineering,Physics
A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Bing Liu,Xiaolin Li,Ruijie Kong,Haijie Yang,Lili Jiang

DOI: https://doi.org/10.3390/ma15062325

IF: 3.4

2022-03-21

Materials

Abstract:As a typical third-generation semiconductor material, silicon carbide (SiC) has been increasingly used in recent years. However, the outstanding performance of SiC component can only be obtained when it has a high-quality surface and low-damage subsurface. Due to the hard–brittle property of SiC, it remains a challenge to investigate the ductile machining mechanism, especially at the nano scale. In this study, a three-dimensional molecular dynamics (MD) simulation model of nanometric cutting on monocrystalline 3C-SiC was established based on the ABOP Tersoff potential. Multi-group MD simulations were performed to study the removal mechanism of SiC at the nano scale. The effects of both cutting speed and undeformed cutting thickness on the material removal mechanism were considered. The ductile machining mechanism, cutting force, hydrostatic pressure, and tool wear was analyzed in depth. It was determined that the chip formation was dominated by the extrusion action rather than the shear theory during the nanocutting process. The performance and service life of the diamond tool can be effectively improved by properly increasing the cutting speed and reducing the undeformed cutting thickness. Additionally, the nanometric cutting at a higher cutting speed was able to improve the material removal rate but reduced the quality of machined surface and enlarged the subsurface damage of SiC. It is believed that the results can promote the level of ultraprecision machining technology.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process

Binbin Meng,Chen Li

DOI: https://doi.org/10.1016/j.jare.2023.04.004

Abstract:Introduction: Monocrystal SiC is representative of the third generation semiconductor materials, the efficient process technology of 6H-SiC wafer have always been a hot topic. Developing a SPDT processing method based on brittle removal mode with controllable surface/subsurface damage is an important approach to solve the processing difficulties of 6H-SiC. Objectives: This work aims to analyze the brittle removal process and fully explain the brittle separation behavior and deformation mechanism of 6H-SiC. The micro-scale crack propagation and the effect of anisotropy on crack distribution during machining process are investigated. Methods: Large-scale molecular dynamics simulation was used in this work. Results: Under the condition of brittle removal, shear fracture occurs in the front area of tool tip. Shear plane is high-index surface, independent of slip system. The location of tensile fracture is the cleavage plane of hexagonal system, and the fracture surface is composed of step-like joint planes or perfect plane structures. Cracks with self-healing capability appear in the area behind the tool when the surface to be machined is basal plane. When the surface to be machined is not basal plane, a large number of dislocations or cracks remain in subsurface region. Under brittle removal mode, a large amount of plastic deformation appears as well, and deformation mode is related to processing scheme. Conclusion: The brittle removal behavior of 6H-SiC under SPDT process has obvious anisotropy. Basal plane is more suitable for brittle removal of 6H-SiC without residual damage such as sub-surface cracks. The crack behind the tool generated by cleavage fracture can be repaired by itself. Fracture behavior is not related to dislocation. The processing method parallel to the c-axis can cause the generation of a large number of surface cracks. The (011¯0)/[21¯1¯0] and (112¯0)/[11¯00] mode is the best way to achieve plastic removal of 6H-SiC during SPDT process.
Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

Zige Tian,Xun Chen,Xipeng Xu

DOI: https://doi.org/10.1088/2631-7990/abc26c

2020-11-04

International Journal of Extreme Manufacturing

Abstract:Abstract Single crystal silicon carbide (SiC) is widely used for optoelectronics applications. Due to the anisotropic characteristics of single crystal materials, the C face and Si face of single crystal SiC have different physical properties, which may fit for particular application purposes. This paper presents an investigation of the material removal and associated subsurface defects in a set of scratching tests on the C face and Si face of 4H-SiC and 6H-SiC materials using molecular dynamics simulations. The investigation reveals that the sample material deformation consists of plastic, amorphous transformations and dislocation slips that may be prone to brittle split. The results showed that the material removal at the C face is more effective with less amorphous deformation than that at the Si face. Such a phenomenon in scratching relates to the dislocations on the basal plane (0001) of the SiC crystal. Subsurface defects were reduced by applying scratching cut depths equal to integer multiples of a half molecular lattice thickness, which formed a foundation for selecting machining control parameters for the best surface quality.

engineering, manufacturing,materials science, multidisciplinary
In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Dongyu Tian,Zongwei Xu,Lei Liu,Zhanqi Zhou,Junjie Zhang,Xuesen Zhao,Alexander Hartmaier,Bing Liu,Le Song,Xichun Luo

DOI: https://doi.org/10.1007/s00170-021-07278-x

IF: 3.563

2021-05-22

The International Journal of Advanced Manufacturing Technology

Abstract:<p class="a-plus-plus">Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC ductile machining under the parameters of this experiment.</p>
Molecular Dynamics Study of Interfacial Micromechanical Behaviors of 6H-SiC/Al Composites under Uniaxial Tensile Deformation

Kai Feng,Jiefang Wang,Shiming Hao,Jingpei Xie

DOI: https://doi.org/10.3390/nano13030404

IF: 5.3

2023-01-19

Nanomaterials

Abstract:This paper investigated the micromechanical behavior of different 6H-SiC/Al systems during the uniaxial tensile loading by using molecular dynamics simulations. The results showed that the interface models responded diversely to the tensile stress when the four low-index surfaces of the Al were used as the variables of the joint surfaces. In terms of their stress–strain properties, the SiC(0001)/Al(001) models exhibited the highest tensile strength and the smallest elongation, while the other models produced certain deformations to relieve the excessive strain, thus increasing the elongation. The SiC(0001)/Al(110) models exhibited the largest elongations among all the models. From the aspect of their deformation characteristics, the SiC(0001)/Al(001) model performed almost no plastic deformation and dislocations during the tensile process. The deformation of the SiC(0001)/Al(110) model was dominated by the slip of the 1/6 Shockley partial dislocations, which contributed to the intersecting stacking faults in the model. The SiC(0001)/Al(111) model produced a large number of dislocations under the tensile loading. Dislocation entanglement was also found in the model. Meanwhile, a unique defect structure consisting of three 1/6 stair-rod dislocations and three stacking faults were found in the model. The plastic deformation in the SiC(0001)/Al(112) interface model was restricted by the L-C lock and was carried out along the 1/6 stair-rod dislocations’ direction. These results reveal the interfacial micromechanical behaviors of the 6H-SiC/Al composites and demonstrate the complexity of the deformation systems of the interfaces under stress.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

XD Han,YF Zhang,XQ Liu,Z Zhang,YJ Hao,XY Guo

DOI: https://doi.org/10.1063/1.2141654

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:The plastic deformation features of intrinsic brittle-featured SiC nanowires by high resolution electron microscopy have been investigated. Strong plastic deformation strain fields were observed in a bent SiC nanowire. The achieved localized strain reaches about 1.5%. Localized lattice bending, atomic lattice disordering, and amorphization are contribution factors to achieve the plastic deformation. The projected Si–Si bonding angle distribution on the (110) atomic plane demonstrates the disordering features of the bent SiC nanowire. Buckling is found at the compressive side of the bent SiC nanowire. Growth bending can be achieved through {111} twinning and phase transformation from 3C to 2H.
Influence of Microstructures on Mechanical Behaviours of SiC Nanowires: a Molecular Dynamics Study

Jun Wang,Chunsheng Lu,Qi Wang,Pan Xiao,Fujiu Ke,Yilong Bai,Yaogen Shen,Xiaozhou Liao,Huajian Gao

DOI: https://doi.org/10.1088/0957-4484/23/2/025703

IF: 3.5

2011-01-01

Nanotechnology

Abstract:The tensile behaviours of [111]-oriented SiC nanowires with various microstructures are investigated by using molecular dynamics simulations. The results revealed the influence of microstructures on the brittleness and plasticity of SiC nanowires. Plastic deformation is mainly induced by the anti-parallel sliding of 3C grains along an intergranular amorphous film parallel to the plane and inclined at an angle of 19.47° with respect to the nanowire axis. Our study suggests that the wide dispersion of mechanical properties of SiC nanowires observed in experiments might be attributed to their diverse microstructures.
Atomistic origin of brittle-to-ductile transition behavior of polycrystalline 3C–SiC in diamond cutting

Liang Zhao,Wangjie Hu,Qiang Zhang,Junjie Zhang,Jianguo Zhang,Tao Sun

DOI: https://doi.org/10.1016/j.ceramint.2021.05.098

IF: 5.532

2021-09-01

Ceramics International

Abstract:The machinability of hard brittle polycrystalline ceramic has a strong correlation with internal microstructures and their accommodated deformation behavior. In the present work, we investigate the mechanisms governing the brittle-to-ductile transition behavior of polycrystalline 3C–SiC in diamond cutting by means of molecular dynamics simulations. Simulation results reveal the co-existence of dislocation slip and amorphization-dominated ductile deformation and cracking along grain boundaries-mediated brittle fracture, as well as the correlation of individual deformation modes with machining force variation and machined surface morphology. In addition, inter-granular fracture, grain boundary sliding and grain pull-up are also operating brittle deformation modes of polycrystalline 3C–SiC. The strong competition between above heterogeneous deformation modes determines the brittle-to-ductile transition behavior in grooving of polycrystalline 3C–SiC. Simulation results also demonstrate that grain size has a strong impact on the brittle-to-ductile transition and material deformation behavior of polycrystalline 3C–SiC under diamond cutting.

materials science, ceramics
Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

Zhihua Yin,Pengzhe Zhu,Baozhen Li,Yimeng Xu,Rao Li

DOI: https://doi.org/10.1007/s11249-021-01526-7

2021-10-07

Tribology Letters

Abstract:In the present study, molecular dynamics (MD) simulations are applied to investigate the polishing process of cubic silicon carbide (3C-SiC) with a rotating abrasive. The influence of abrasive rotational speed and rotation axis orientation on the friction characteristics and deformation behaviors of 3C-SiC is studied. The results show that as the rotational speed increases, the normal force first increases until it reaches its maximum at 25 rad/ns and then decreases. The evolution of transverse force with the rotational speed is more complicated and the smallest transverse force and friction coefficient are obtained at the rotational speed of 50 rad/ns. Besides, the transverse force increases while the normal force decreases with the rotation angle when the angular velocity vector of the rotational abrasive is parallel to the substrate surface. The case when the rotational speed is 25 rad/ns and the rotation angle is 0 is a significant critical situation. At the critical situation, we observe the lowest material removal rate, the deepest subsurface damage layer, the biggest high stress region and the smallest high temperature region for all rotational speeds and rotation axis orientations. Moreover, in the simulations, phase transformation (mainly amorphization) induced by high pressure is more pronounced than that by thermal effect. The results gained can shed light on the atomic-scale material removal and deformation mechanisms of 3C-SiC during polishing process.Graphic

engineering, chemical, mechanical
Formation of high density stacking faults in polycrystalline 3C-SiC by vibration-assisted diamond cutting

Liang Zhao,Jianguo Zhang,Junjie Zhang,Alexander Hartmaier,Tao Sun

DOI: https://doi.org/10.1016/j.jeurceramsoc.2022.06.002

IF: 5.7

2022-06-05

Journal of the European Ceramic Society

Abstract:Revealing the ductile deformation mechanisms of ultra-hard brittle cubic silicon carbide (3C-SiC), as well as their correlations with microstructure evolution, is crucial for facilitating the ductile machinability of the ceramic material. In the present work, we report the formation of highly oriented high density stacking faults accompanied with suppressed amorphization and cracking in polycrystalline 3C-SiC in ultrasonic elliptical vibration-assisted diamond cutting, which contribute to significantly enhanced ductile material removal of the ceramic material compared to ordinary cutting. Specifically, characterizations of Raman spectroscopy on machined surface and cross-section transmission electron microscopy on subsurface, as well as molecular dynamics simulations of the two kinds of cutting processes, are jointly performed to elucidate the mechanisms of phase transformation and microstructure evolution that govern the ductile material removal of polycrystalline 3C-SiC under the vibration assistance. In particular, the formation mechanisms of highly oriented high density stacking faults emitted from grain boundaries are revealed. Current findings provide insights into the ductile deformation behavior of hard brittle ceramics enhanced by field-assisted deformation process.

materials science, ceramics
Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Xue Kun,Niu Lisha,Shi Huiji

DOI: https://doi.org/10.3901/cjme.2010.06.671

IF: 2.964

2010-01-01

Chinese Journal of Mechanical Engineering

Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.
Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation

Liang Zhao,Junjie Zhang,Janine Pfetzing,Masud Alam,Alexander Hartmaier

DOI: https://doi.org/10.1016/j.matdes.2020.109223

2021-01-01

Abstract:The interplay between ductile and brittle deformation modes in hard brittle materials exhibits a strong size effect. In the present work, indentation depth-dependent deformation mechanisms of single-crystal 3C-SiC under Berkovich nanoindentation are elucidated by finite element simulations and corresponding experiments. A novel finite element framework, that combines a crystal plasticity constitutive model for describing dislocation slip-based ductile deformation and a cohesive zone model for capturing crack initiation and propagation-induced brittle fracture, is established. The utilized parameters in the crystal plasticity model of 3C-SiC are calibrated according to the load-displacement curves obtained from corresponding Berkovich nanoindentation experiments. Subsequent finite element simulations and experiments of nanoindentation jointly reveal co-existing microscopic plastic deformation and brittle fracture of 3C-SiC at different indentation depths, which significantly affect the observed macroscopic mechanical response and surface pile-up topography. In particular, the predicted morphology of surface cracks at an indentation depth of 500 nm agrees well with experimental observation, and the correlation of crack initiation and propagation with surface pile-up topography is theoretically analyzed.

materials science, multidisciplinary

National Healthy Schools Programme: Developing the Evidence Base

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Effect of anisotropy on deformation and crack formation under the brittle removal of 6H-SiC during SPDT process

Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates

In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Molecular Dynamics Study of Interfacial Micromechanical Behaviors of 6H-SiC/Al Composites under Uniaxial Tensile Deformation

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Influence of Microstructures on Mechanical Behaviours of SiC Nanowires: a Molecular Dynamics Study

Atomistic origin of brittle-to-ductile transition behavior of polycrystalline 3C–SiC in diamond cutting

Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

Formation of high density stacking faults in polycrystalline 3C-SiC by vibration-assisted diamond cutting

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation