Abstract:High sensitivity to crack and damage of chemical vapor-deposited silicon carbide (CVD- SiC) restricts the high-efficiency and low-damage manufacturing of CVD-SiC components. This paper aims to reveal the damage and material removal mechanisms of CVD-SiC after being scratched by diamond abrasives. The mechanical properties, scratching force, depth of ductile-brittle transition, residual depth and material removal damages of the CVD-SiC were discussed by the indentation, nano-scratching experiments, and compared with sintered silicon carbide (SSiC) ceramics. The results demonstrated that the mechanical properties of CVD-SiC are better than SSiC. In terms of hardness and fracture toughness, CVD-SiC demonstrates a 10– 20% and 20– 30% higher level of performance than SSiC, respectively. SSiC exhibits a brittleness level approximately 30% higher than that of CVD-SiC. SSiC ceramics are prone to crack deflection, intergranular fracture and transgranular fracture during indentation, indicating a higher propensity for brittle fracture in SSiC. The crack propagation in CVD-SiC is relatively regular. Both materials undergo the ductile, ductile-brittle transition and brittle stage, and the fluctuation variability of CVD-SiC material is notably lower than that of SSiC during the brittle stage. Compared with SSiC, the residual depth, groove width and transverse force of CVD-SiC are smaller under the same normal load. The critical depth of ductile-brittle transition of CVD-SiC is about 2 times that of SSiC in experimental and theoretical, indicating that CVD-SiC easily achieves ductile grinding. The mechanical properties, crack system and crystal structure of the CVD-SiC and SSiC materials cause the divergences in brittle removal. The radial-median crack system dominates the material removal of CVD-SiC. The disparity of deformations on the inside and outside of the crystal in the brittle stage leads to significant fluctuation variability of force and depth of SSiC during the scratching.

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Atomistic origin of brittle-to-ductile transition behavior of polycrystalline 3C–SiC in diamond cutting

Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Thermal softening-suppressed inter-granular embrittlement of polycrystalline 3C-SiC under diamond cutting

Sculpturing of single crystal silicon microstructures by elliptical vibration cutting

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Molecular dynamics analysis of subsurface brittleness mechanism of nanocrystalline 3C-SiC rough friction surface

Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal

Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

Surface deformation, phase transition and dislocation mechanisms of single crystalline 6H-SiC in oblique nano-cutting

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Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Polytypic transformation behavior from 4H-SiC to 3C-SiC during high-speed scratching of single crystalline silicon carbide

In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope

Coupled effect of tool geometry and tool-particle position on diamond cutting of SiCp/Al

Material removal and damage formation mechanisms induced by periodic indentation during ultrasonic vibration-assisted scratching of SiC f /SiC composites

Damage characteristics and material removal mechanisms of CVD-SiC in nanotests: A comparative with sintered SiC

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation