Abstract:We report a comparative study of the electronic and optical properties of five silicon carbide (SiC) materials of different crystal structures (6H and 3C polytypes), sizes (micro- and nanocrystals), and morphologies (nanowires of SiC-SiO2 core shell structures and oxide-free nanowires). X-ray absorption near-edge structures (XANES) at both Si K- and C K-edge have been used to investigate the electronic structures of SiC. Theoretical calculations using density functional theory (DFT), the WIEN2k code are in good accord with the experiment. It is found that both 6H- and 3C-SiC have similar XANES at Si K-edge hence similar local structure at the Si site but slightly and more noticeable difference at the C K-edge, which is due to the difference in band gaps among the polytypes. The spectra of core shell nanowires are found to have both SiO2 and SiC contributions in which SiO2 is dominant. The SiO2 shell can be almost completely removed by hydrofluoric acid treatment. X-ray excited optical luminescence (XEOL) was used to measure light emission from SiC by tuning the excitation photon energy across both Si K- and C K-edge. Luminescence was observed from all SiC samples upon X-ray excitation, though at different wavelengths depending on the crystal structures and morphologies. By measuring the yield of the total luminescence (300-800 nm) and luminescence at selected wavelengths with excitation photon energy across the absorption edge, we are able to ascribe the luminescence at various wavelengths to surface states and defects, quantum confinement, and SiO2 surface/SiC-SiO2 interface in core shell nanowires. The implications of these findings are discussed.

Micropipe Observation in Sublimation 6H-Sic By Optical Microscopy

Investigation of Micropipes in 6h–sic by Raman Scattering

Model for micropipe formation in 6H-SiC single crystal by sublimation method

Hexagonal voids and the formation of micropipes during SiC sublimation growth

Mapping of Micropipes and Downfalls on 4H-Sic Epilayers by Candela Optical Surface Analyzer

Methods for the Reduction of the Micropipe Density in SiC Single Crystals

Three-dimensional Observation of Defects in Nitrogen-Doped 6H-Sic Crystals Using a Laser Scanning Confocal Microscope

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Electronic Structures and Optical Properties of 6H-and 3C-Sic Microstructures and Nanostructures from X-Ray Absorption Fine Structures, X-Ray Excited Optical Luminescence, and Theoretical Studies

Experimental Investigation on Laser Micromilling of SiC Microchannels

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Observation of Si Out-Diffusion Related Defects in SiC Growth on Si(001)

Microstructure Evolution and Reaction Mechanism of Microporous Carbon Derived SiC Ceramic

The Microstructure and Optical Properties of P-Type Microcrystalline Silicon Thin Films Characterized by Ex-Situ Spectroscopic Ellipsometry

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Pvt Growth of 6h Sic Crystals and Defect Characterization