Abstract:As the critical dimensions of semiconductor manufacturing processes gradually decrease, the requirements for production yield management become increasingly stringent. During the manufacturing process, there are many different types of defects, such as micron-sized particles, millimeter-sized scratches, etc. Multiple categories and different scales bring great challenges to the detection and identification of defects. This paper provides a full-flow surface defect identification method based on spot scanning scattering for unpatterned wafers. First, an adaptive threshold method with dynamic kernel windows is used to perform line-by-line scanning inspection of the wafer Mercator image. The 3σ decision strategy is used to avoid the impact of defects on background estimation and to improve detection sensitivity. After morphological processing, connected domain analysis is performed to obtain the defect mask, and feature information such as the shape, size, and distribution of the defect is extracted. Finally, the defect identification is performed by rules based binning, and the identified defects are converted into wafer polar coordinate image for display and analysis. In the experiments, the proposed method is used to identify micron-scale particles as well as large scratches on the millimeter scale for SiC wafers. Relative to the actual production rate requirement of 20 wafers per hour, the analysis time for a 6-inch wafer is 24.4 s, which can meet the requirement. Meanwhile, the test results illustrate the effectiveness of the method. The proposed method is recommended for early-stage defect detection and identification of unpatterned wafers.

Mapping of Micropipes and Downfalls on 4H-Sic Epilayers by Candela Optical Surface Analyzer

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Characterization of Obtuse Triangular Defects on 4H-Sic 4° Off-Axis Epitaxial Wafers

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Single Photon Counting Spatial Uniformity of 4H-Sic APD Characterized by SNOM-Based Mapping System

Evaluation on Ground Surface Accuracies of Large-Depth and Steeply Micro-Structured SiC Surfaces

Understanding the Breakdown Asymmetry of 4H-Sic Power Diodes with Extended Defects at Locations along Step-Flow Direction

Reduction of Morphological Defects in 4H-Sic Epitaxial Layers

4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light Scattering

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Optical Far-Field Detection of Sub-λ/14 Wide Defects by Conjugate Structured Light-Field Microscopy (C-Sim)

Guided Wave Imaging of Oblique Reflecting Interfaces in Pipes Using Common-Source Synthetic Focusing

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Full-flow surface defect identification method based on spot scanning scattering for unpatterned wafer

High Sensitivity Surface Defect Inspection of SiC and SmartSiCTM Substrates Using a DUV Laser-Based System

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Measurements of dislocations in 4H-SiC with rocking curve imaging

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching