Abstract:In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to 30 keV He ion irradiation across various doses while maintaining a temperature of 800°C. Employing techniques including Raman spectroscopy, transmission electron microscopy (TEM), and nanoindentation, the alterations in microstructure and hardness resulting from He irradiation with various fluences were examined.In sc-SiC, irradiation prompted the formation of He platelets, resulting in a hardness increase of 7 GPa. In contrast, nc-SiC, characterized by a higher stacking fault density, exhibited the formation of bubbles, primarily at grain boundaries (GBs), with fewer occurrences within the grain interior, leading to a hardness increase of 1 GPa. Notably, in both sc- and nc-SiC, hardness reached saturation and subsequently stabilized or declined with increasing He fluence.Through molecular dynamics (MD) cascade simulations, we discerned that various planar defects do not uniformly contribute to enhancing radiation resistance. For example, intrinsic stacking faults (ISF) and twins in SiC played a substantial role in altering defect density and configurations, thereby facilitating point defect annihilation. Conversely, extrinsic stacking faults (ESF) and Σ3 GBs had a limited impact on defect production during a cascade.Furthermore, calculations of cluster diffusivity revealed an accelerated movement of He-vacancy towards GBs compared to bulk material and other planar defects. Moreover, the scarcity of point defects and constrained mobility of He atoms towards stacking faults in nc-SiC elucidated the marked tendency of He to form platelets in sc-SiC.Additionally, our findings established a correlation between the calculated indentation hardness and the geometry of He defects, consistent with experimental results from nanoindentation. These results significantly contribute to ongoing efforts to design SiC materials with heightened radiation tolerance.

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Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

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Study of SiC Surface Defects on Sapphire/nitride Compound Substrates

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Subsurface Deformation and Crack Propagation Between 3C-Sic/6h-sic Interface by Applying In-Situ Laser-Assisted Diamond Cutting RB-SiC

Direct Observation Of Structural And Defect Evolution In C-Rich Sic Using In Situ Helium Ion Microscopy

Atomic-scale revealing defects in ion irradiated 4H-SiC

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

Exploring Defect Behavior in Helium-Irradiated Single-Crystal and Nanocrystalline 3C-Sic at 800°C: A Synergy of Experimental and Simulation Techniques

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology

Non‐destructive and deep learning‐enhanced characterization of 4H‐SiC material

Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC