Abstract:Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Quantifying Implantation Damage and Point Defects with Multislice Electron Ptychography

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Imaging Vacancy Defects in Single-Layer Chromium Triiodide

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy

Projective Quasiparticle Interference of a Single Scatterer to Analyze the Electronic Band Structure of ZrSiS

Precise Fabrication of Point Defects in Self-Assembled Three-Dimensional Macroporous Photonic Crystals.

Imaging interstitial atoms with multislice electron ptychography

Investigation of Point Defects by Aberration-Corrected STEM and First-Principles Theory

Uncovering the three-dimensional structure of upconverting core–shell nanoparticles with multislice electron ptychography

Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects

Uncovering the Three-Dimensional Structure of Upconverting Core-Shell Nanoparticles with Multislice Electron Ptychography

Electrometry by optical charge conversion of deep defects in 4H-SiC

Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study

First Principles Investigations on the Carbon-Related Defects in Silicon

Sensing The Point Defects by Single-Crystal Diamond MEMS Resonators

Space- and Angle-Resolved Vibrational Spectroscopy to Probe the Local Phonon Modes at Planar Defects

Picometer-precision few-tilt ptychotomography of 2D materials

Three-dimensional Observation of Defects in Nitrogen-Doped 6H-Sic Crystals Using a Laser Scanning Confocal Microscope

Single-defect phonons imaged by electron microscopy