Abstract:Defect identification for unintentionally induced defects and radiation-implemented defects always attracts great attention in semiconductor materials. Recent advances in carbon-implemented single-photon emitters in silicon urgently require the accurate identification of defect structures to reveal transition mechanisms. Using hybrid functional with finite size correction, we investigate the charge and optical transitions of carbon-related defects, including CSiCSi, VSiCSi, CSi, SiiCSiCSi, and Ci. Except for Ci, other defects present the negative-U feature in the charge transition process. CSiCSi and VSiCSi tend to perform p-type conductivity with the electron capture transition close to the valence band, of which transition level epsilon (0/-1) is 0.30 eV for CSiCSi and epsilon (+1/-2) is 0.34 eV for VSiCSi. CSi and SiiCSiCSi present a bipolar doping character, and CSi tends to capture holes with transition epsilon (0/+2) = 0.10 eV. The optical transitions that typically emit or absorb light in the telecom optical wavelength bands are identified in these defects in terms of band edge recombination. The zero-phonon lines of optical transitions of epsilon (+2/+1) for VSiCSi and Ci are consistent with a previous experiment involving single-photon emitters. The findings are helpful to understand the performance degradation of silicon devices and provide a reference for identifying the structure of carbon-related defects in silicon. This study investigates carbon-related defects in silicon using hybrid functional theory with finite size correction. The research explores charge and optical transitions of defects including CSiCSi, VSiCSi, CSi, Ci, and SiiCSiCSi. Optical transitions of these defects occur in telecommunication wavelength bands, validating previous experiments. The study provides insights for detecting defects in silicon.image (c) 2024 WILEY-VCH GmbH

First Principles Investigations on the Carbon-Related Defects in Silicon

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs

Characterizations on the Doping of Single-Crystal Silicon Carbide

Defect States in Carbon and Oxygen Implanted P-Type Silicon

Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons

First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC

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First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC

First principles analysis of impurities in silicon carbide grain boundaries

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

To define nonradiative defects in semiconductors: An accurate DLTS simulation based on first-principle

Computational analysis of electronic structure and optical properties of monocrystalline silicon-vacancy defect system based on density functional theory

Site-dependent properties of quantum emitters in nanostructured silicon carbide

The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

First-principles Study of Non-Radiative Carrier Capture by Defects at Amorphous-Sio2/si(100) Interface

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon