Abstract:SiC substrates have outstanding advantages over traditional materials in power device application, and are mainly prepared by a physical vapor transport method (PVT). Whether the PVT furnace works by resistance heating or induction heating, both face the problem of the deterioration of growth conditions during a long-term process. The relative position of the thermal field directly affects the crystal growth conditions, but the law of specific influence and the change in physical environment inside the thermal field have not been made sufficiently clear and lack systematic research. Therefore, SiC single crystal growth, with different directions and rates in the direction of movement of the heating module, was modeled using a simulation method, and the law of variation of the physical field, including heat flux, temperature, powder porosity and growth rate parameters under different schemes, was analyzed. The study indicates that the decay of raw materials is the primary reason why growth conditions cannot be maintained. The results verified that different coils' modes of movement have different effects on the improvement or adjustment of SiC crystals' growth conditions. Under the same temperature control conditions, the coils' movement rates of 200 μm/h, 0, -200 μm/h and -400 μm/h correspond to the average growth rates of 140, 152, 165 and 172 μm/h, respectively. The results show that downward displacement of the coils is beneficial in compensating for the deterioration of growth conditions, but it is easier to form convex surfaces and is not conducive to expanding diameter growth. This also verifies that the desired crystal growth state can be obtained by adjusting the position of the thermal field.

Effect of 6H-Sic Crystal Growth Shapes on Thermo-Elastic Stress in the Growing Crystal

Effect of the Growth Interface Shape on the Thermoelastic Stresses in SiC Crystal Prepared by PVT Technique

Thermal Stress Analysis of Crystal Morphology in Growth of Silicon Carbide Bulk Crystal by PVT Method

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

To investigate interface shape and thermal stress during sapphire single crystal growth by the Cz method

Comparing basal and prismatic slips induced by thermal stresses in 4H-SiC crystal

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Effects of the Porosity of the Source Materials on the Initial Growth of 6H-Sic Crystal

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

To Control Interface Shape and to Reduce Thermal Stress During Cz-Growth of Sapphire Single Crystal

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Effects of grain size of source material on growing 6H-SiC bulk crystal by physical vapor transport

Size and Crystallographic Orientation Effects on the Mechanical Behavior of 4H-Sic Micro-/nano-pillars

Origins and characterization techniques of stress in SiC crystals: A review

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Pvt Growth of 6h Sic Crystals and Defect Characterization

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

The Simulation of the Stress Distribution in Sapphire Crystal Grouth Progres

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Effect of Sapphire Thermal Performance Anisotropy on Crystal Growth by SAPMAC Method