Abstract:High-performance polysilicon (P-Si) is fundamental as a resource for manufacturing semiconductor devices with high photoelectric properties. However, experimentally characterizing the solidification process in detail has been difficult on account of the extremely rapid cooling rate and limited available characterization methods. Therefore, this study used molecular dynamics (MD) to investigate Si crystallization behavior through directional solidification at different cooling rates. The entire system was first analyzed in terms of energy and radial distribution function, after which the microstructural evolution was characterized by visualization. Results indicated that the cooling rate significantly affected the directional solidification of Si, and an excessively high cooling rate resulted in a decrease in the long-range order of the system. At the same cooling rate, the crystallization rates of (1 0 0), (1 1 0), and (1 1 1) crystal faces followed a descending order. The configurations of the S-L interface with different crystal faces were distinct. Specifically, while the atom numbers of defect structures that were formed in systems of (1 0 0) and (1 1 0) crystal faces were few, those formed in the (1 1 1) crystal face were more. It was difficult for the (1 0 0) crystal face to form dislocations regardless of the crystallization degree at different cooling rates, and the (1 1 0) crystal face only formed a few dislocations at high cooling rates. Dislocations formed at all cooling rates during the directional solidification of the (1 1 1) crystal face, and there was a weak correlation between the number of dislocations and cooling rates. Twinning mainly occurred during the solidification process of the (1 1 1) crystal face, and there was no obvious linear relation between its number and the cooling rate. Moreover, when high-energy dislocations occurred more often, the system stability decreased. Overall, this work will be helpful to understand the commonness and difference in directional solidification of Si with different crystal faces at different cooling rates.

Analysis of Defect Propagation in SiC Crystals Formed by Solution Growth and Sublimation Growth and High Quality SiC Crystal Growth by the Hybrid Method Combining both Growth Techniques

Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

(Invited) Defects in Cast-Mono Crystalline Silicon

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Analysis of Structural Development and Defects during the Anisotropic Growth of Silicon

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

Reaction pathway analysis for the conversion of perfect screw basal plane dislocation to threading edge dislocation in 4H-SiC

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC