Study on Photoluminescence Characteristics of SiOx: Er Thin Films
Haibo Shen,Hengqun Guo,Jun Xu,Kunji Chen,Qiming Wang
DOI: https://doi.org/10.3969/j.issn.1003-353x.2010.09.006
2010-01-01
Abstract:SiOx∶Er thin films were prepared by RF magnetron reactive sputtering technique using Er2O3 and Si targets.After annealing at different temperatures and time,the samples exhibit photoluminescence peaks at around 1 530,1 542 and 1 555 nm.It is found that annealing can enhance the PL intensity remarkably.The variations of SiOx∶Er thin films photoluminescence with annealing temperatures and annealing time were also studied,and found that when Er2O3∶Si of 1∶1,the temperature of 1 100 ℃,20 min annealing were the best annealing conditions.XRD spectra and optical absorption measurements are performed to investigate the structure of films,therefore,the size of nc-Si is 1.6 nm,the optical band gap Eg of the sample is estimated to be 1.56 eV,indicating that the films are silicon-rich.Finally,three different Er2O3 and Si proportions were studied,the best ratio of the Er2O3∶Si is 1∶3,and the luminescence phenomenon of films was discussed.