1.53µm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicates

Bing Wang,Ruimin Guo,Lei Wang,Xingjun Wang

DOI: https://doi.org/10.1109/GROUP4.2012.6324090

2012-01-01

Abstract:We investigated the 1.53μm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicate metal-insulator-silicon light emitting devices. Intense 1.53μm light emissions and large Er3+ impact excitation cross sections were obtained.

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1.53μm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicates

Bing Wang,Ruimin Guo,Lei Wang,Xingjun Wang,Zhiping Zhou

DOI: https://doi.org/10.1109/GROUP4.2012.6324090

2012-01-01

Abstract:We investigated the 1.53μm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicate metal-insulator-silicon light emitting devices. Intense 1.53μm light emissions and large Er3+ impact excitation cross sections were obtained. © 2012 IEEE.
1.53&Amp;#x00b5;m Electroluminescence of Erbium Excited by Hot Carriers in ErRE (re=yb, Y) Silicates

Bing Wang,Ruimin Guo,Lei Wang,Xingjun Wang,Zhen Zhou

DOI: https://doi.org/10.1109/group4.2012.6324090

2012-01-01

Abstract:We investigated the 1.53μm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicate metal-insulator-silicon light emitting devices. Intense 1.53μm light emissions and large Er 3+ impact excitation cross sections were obtained.
Large Electroluminescence Excitation Cross Section and Strong Potential Gain of Erbium in ErYb Silicate

Bing Wang,Ruimin Guo,Xingjun Wang,Lei Wang,Bing Yin,Zhiping Zhou

DOI: https://doi.org/10.1063/1.4795153

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:1.53 μm electroluminescence of erbium was observed in ErYb silicate metal-insulator-silicon light emitting device (MISLED). The erbium ions were excited by direct impact of hot carriers at electric field higher than 7 MV/cm. The conduction and carrier injection mechanisms were investigated. The impact excitation cross section of Er ions was measured to be 3 × 10−14 cm2, three times of Er-doped SiO2 MISLED. Rate equation modeling suggests that strong potential material's gain of more than 23 dB/cm from the ErYb silicate may be achieved by electrical pumping.
Near-infrared Electroluminescence in ErYb Silicate Based Light-Emitting Device

B. Wang,R. M. Guo,X. J. Wang,L. Wang,L. Y. Hong,B. Yin,L. F. Gao,Z. Zhou

DOI: https://doi.org/10.1016/j.optmat.2012.02.026

IF: 3.754

2012-01-01

Optical Materials

Abstract:We report the first observation of near-infrared electroluminescence (EL) in ErYb silicate based metal-insulator-semiconductor (MIS) light-emitting device. The ErYb silicate thin film and the device were fabricated on silicon substrate using the standard silicon technology. The EL spectrum at 1.53 mu m was observed under a current density of 1.2 mA/cm(2). The conduction mechanism of the device was Fowler-Nordheim tunneling and the EL mechanism was attributed to the direct impact excitation of Er ions by the hot electrons produced by the high electric field in the silicate layer. (C) 2012 Elsevier B.V. All rights reserved.
Photoluminescence Quantum Efficiency and Energy Transfer of Erre Silicate (re = Y, Yb) Thin Films

B. Wang,X. J. Wang,M. J. A. de Dood,R. M. Guo,L. Wang,M. Vanhoutte,J. Michel,L. C. Kimerling,Z. Zhou

DOI: https://doi.org/10.1088/0022-3727/45/16/165101

2012-01-01

Abstract:Photoluminescence quantum efficiency and energy transfer were studied in ErRE (RE = Y, Yb) silicate thin films. For the first time, we experimentally determined the radiative/non-radiative decay rates of ErYb and ErY silicates and obtained photoluminescence quantum efficiencies of 0.28 +/- 0.08 and 0.39 +/- 0.13, respectively. Energy transfer between Yb and Er in ErYb silicate was investigated by comparing the effective excitation cross sections of ErYb and ErY silicate. At different pumping wavelengths, forward and backward energy transfer caused by the presence of Yb was experimentally demonstrated.
Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

Miaomiao Jiang,Chen Zhu,Junwei Zhou,Jinxin Chen,Yuhan Gao,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.4966224

IF: 0.906

2019-01-01

Acta Physica Sinica

Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.
Photoluminescence and electroluminescence of erbium yttrium and ytterbium co-doped Er silicates

Xingjun Wang,Bing Wang,Ruimin Guo,Lei Wang,Zhiping Zhou

DOI: https://doi.org/10.1117/12.999747

2012-01-01

Abstract:Erbium silicates and Yttrium and Ytterbium co-doped Er silicates have been fabricated in sol-gel and sputtering methods. Two orders of magnitude photoluminescence intensity enhancement was observed by Yttrium and Ytterbium co-doping Er silicates compared with that of pure Er silicate. Three kinds of waveguide structure, the strip-loaded, slot and hybrid ErYb/Y silicates waveguides have been obtained, and the optical amplification was observed in these waveguide structures. 1.53 mu m electroluminescence in ErYb silicates was also realized using hot carriers' impact excitations of Er ions.
1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Yang Yin,Kai Sun,Wanjin Xu,Guangzhao Ran,Guogang Qin,Shumao Wang,Chaoqun Wang

DOI: https://doi.org/10.1088/0953-8984/21/1/012204

2009-01-01

Abstract:Si-rich silicon oxide (SRO)/Er-Si-O/SRO multilayers were prepared on p-Si substrates using magnetron sputtering. X-ray diffraction measurements indicate that a mixture of silicates Er2Si2O7 and Er2SiO5 was formed after the multilayers were annealed at 1000 and 1150 degrees C. Strong Er3+ 1.53 mu m photoluminescence (PL) at room temperature has been observed from these multilayers and the full width at half-maximum of the 1.53 mu m peak is less than 1.8 nm for the multilayers annealed at 1150. C. Er3+ 1.53 mu m electroluminescence has been observed from erbium silicate films for the first time.
Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Yang,Yunpeng Li,Luelue Xiang,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.4804626

IF: 4

2013-01-01

Applied Physics Letters

Abstract:It is well known that the light emission at ∼1.54 μm falls within the minimum loss window of silica optic fibers for optical communication and is of significance for the silicon-based optoelectronic integration. Herein, we report on erbium (Er)-related electroluminescence (EL) at ∼1.54 μm from Er-doped ZnO (ZnO:Er)/p+-Si heterostructured light-emitting devices. Such Er-related ∼1.54 μm EL can be enabled at a voltage as low as 6 V. It is derived that the Er-related ∼1.54 μm EL is triggered by transfer of the energy released from the defect-assisted indirect recombination in the ZnO host to the incorporated Er3+ ions. We believe that the present achievement paves the way for the Si-compatible ∼1.54 μm light emitters using the cost-effective oxide semiconductors as the hosts of Er3+ ions.
Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

Y Yin,W J Xu,F Wei,G Z Ran,G G Qin,Y F Shi,Q G Yao,S D Yao

DOI: https://doi.org/10.1088/0022-3727/43/33/335102

2010-01-01

Abstract:Si-rich erbium silicate (SRES) films were deposited on p-type Si substrates by the magnetron sputtering technique and then annealed at 850 and 1000 degrees C in N-2. Rutherford backscattering spectroscopy and Raman spectroscopy indicate that erbium silicates and Si excess, both in the amorphous phase, coexist in the SRES films. Photoluminescence excitation measurement indicates the sensitization effect of Si excess by an energy transfer process in the SRES film. The current-voltage characteristics show apparent improvement of carrier injection and transport in the SRES device (indium tin oxide (ITO)/SRES/p-Si) due to the Si excess in the SRES film. Room temperature Er3+ 1.54 mu m electroluminescence from the SRES device (ITO/SRES/p-Si) has been measured and studied by comparison with the erbium silicate device (ITO/erbium silicate/p-Si) and Er-doped Si-rich Si oxide (Er : SRO) device (ITO/Er : SRO/p-Si).
1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Y Yin,K Sun,W J Xu,G Z Ran,G G Qin,S M Wang,C Q Wang

DOI: https://doi.org/10.1088/0953-8984/21/1/012204

2009-01-01

Abstract:Si-rich silicon oxide (SRO)/Er-Si-O/SRO multilayers were prepared on p-Si substrates using magnetron sputtering. X-ray diffraction measurements indicate that a mixture of silicates Er(2)Si(2)O(7) and Er(2)SiO(5) was formed after the multilayers were annealed at 1000 and 1150 °C. Strong Er(3+) 1.53 µm photoluminescence (PL) at room temperature has been observed from these multilayers and the full width at half-maximum of the 1.53 µm peak is less than 1.8 nm for the multilayers annealed at 1150 °C. Er(3+) 1.53 µm electroluminescence has been observed from erbium silicate films for the first time.
Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Hao Shen,Lingbo Xu,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1063/1.4987035

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:Er silicate/porous silicon (PS) composites with effective sensitized erbium emission at 1.53 μm have been synthesized on the PS framework. Cross-sectional scanning electron microscopy and X-ray diffraction reveal that the PS is coated by Er silicate in composites. Indirect excitation of Er3+ ion luminescence via energy transfer from PS is confirmed. The temperature dependence of Er-related photoluminescence intensity and lifetime is investigated, which concludes a phonon-mediated energy transfer process. The combination of the PS framework and Er silicate provides a possible strategy for practical silicon-based light sources.
Multicolor and Near-Infrared Electroluminescence from the Light-Emitting Devices with Rare-Earth Doped Tio2 Films

Chen Zhu,Chunyan Lv,Zhifei Gao,Canxing Wang,Dongsheng Li,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.4932064

IF: 4

2015-01-01

Applied Physics Letters

Abstract:We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO2 (TiO2:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE3+ ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO2:RE/SiO2/Si, in which the SiO2 layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO2 layer via the trap-assisted tunneling mechanism, gaining the potential energy ∼4 eV higher than the conduction band edge of TiO2. Therefore, as the electrons in the SiO2 layer drift into the TiO2:RE layer, they become hot electrons. Such hot electrons impact-excite the RE3+ ions incorporated into the TiO2 host, leading to the characteristic emissions.
Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Houwei Pang,Majun He,Jie Hu,Yuxuan Fan,Huabao Shang,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/j.optmat.2022.112462

IF: 3.754

2022-01-01

Optical Materials

Abstract:1.54 mu m photoluminescence and electroluminescence are achieved from erbium doped Ga2O3 films on silicon substrates and corresponding devices fabricated by sputtering, respectively. Efficient energy transfer between Ga2O3 and erbium ions is realized in optical pumping, with the energy transfer efficiency of 54.9%. The ~ 1.54 mu m electroluminescence of erbium ions here is proved to originate from indirect excitation, different from the conventional impact excitation by hot electrons. Herein, the light emitting devices present a turn-on voltage of similar to 13 V and onset electric field of 1.4 MV/cm. This work demonstrates the potential of preparing practical electrical-driven silicon-based light sources from erbium doped Ga2O3 films.
Enhanced Luminescence of Silica Thin Films Co-Doped with Er3+ and Yb3+

G Gu,PP Ong,JH Cai,W Yang,YW Du,SH Yang

DOI: https://doi.org/10.1016/s0040-6090(98)01397-2

IF: 2.1

1999-01-01

Thin Solid Films

Abstract:Er3+- and Yb3+- ions-co-doped silica thin films were prepared by RF magnetron sputtering. Enhanced photoluminescence centered at 1.534 μm was detected at room temperature when excited by a Nd–YAG laser line at 1.064 μm. The photoluminescence intensity increases with Yb-atom doped concentration and tends to saturate at the Yb-atom concentration of 3.0%, indicating that the enhanced photoluminescence results from the energy transfer from Yb3+ to Er3+.
Enhanced Er<sup>3&#x002B;</sup> Luminescence of Er Silicate Through Y and Yb Co-Doping

X. J. Wang,Hideo Isshiki,T. Kimura,Zhen Zhou

DOI: https://doi.org/10.1109/group4.2009.5338287

2009-01-01

Abstract:Enhanced Er 3+ luminescence of Er silicate through Y and Yb co-doping were observed in different pump wavelengths of 654 nm and 980 nm, respectively, and corresponding excited mechanism was discussed.
Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Lingbo Xu,Hongjing Piao,Zhiyuan Liu,Can Cui,Deren Yang

DOI: https://doi.org/10.1016/j.jlumin.2021.118009

IF: 3.6

2021-01-01

Journal of Luminescence

Abstract:Erbium doped Si-related compound films, with the 1540 nm emission coinciding with the minimum loss window of optical telecommunication, are regarded as appealing platforms of light sources for silicon photonics. In many previous reports, however, the unipolar carrier injection in silicon oxide/nitride films leads to favorable impact excitation of Er rather than sensitization, requiring high onset voltage that is not compatible with Si microelectronics. Silicon rich oxynitride (SRON) with tunable bandgap enables equivalent bipolar injection, yet there are few reports about light emitting devices (LEDs) based on this material with Er doping. Here, sensitized electroluminescence (EL) from erbium doped SRON with an onset voltage as low as 5 V has been demonstrated. The sensitization mechanism is evaluated by correlating the evolution of charge transport in SRON films subjected to different thermal treatments with that of Er3+ EL. The EL can be attributed to bipolar Poole-Frenkel injection of carriers and subsequent capture by Si dangling bond related trap states, followed by energy transfer to Er3+ ions. These results indicate that SRON serves as a promising Er3+ host for complementary metal-oxidesemiconductor (CMOS) compatible light sources.
Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Jie Hu,Houwei Pang,Yuan Wang,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1109/LED.2023.3235716

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:An Erbium doped light emitting device characterized with long-term reliability has been realized. The devices are based on npn heterojunction structure which are composed of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}$ </tex-math></inline-formula> -Si/ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si/Er-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula> -ZnO. The electroluminescence intensity of Er3+ ions has a well linear relation with operating currents. Meanwhile, the Er3+ ions electroluminescence device with a 3 V onset voltage can keep on operating for more than 1200 hours, attributed to the separation of supply and acceleration of electrons which excite Er3+ ions. Electrons originated from the former <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n}^{+}{p}$ </tex-math></inline-formula> junction diffuse through <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -Si layer, then they are accelerated in the following space charge region of the latter pn junction to collide with Er3+ ions in ZnO layer. Moreover, the npn heterojunction device structure is also applicable to other rare earths such as Tm, Eu, etc. This strategy will pave a way to electroluminescence of rare earths, and also provide a monolithic silicon light source to integrated silicon photonics.
Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Qianyu Fu,Yuhan Gao,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1063/1.4952751

IF: 2.877

2016-01-01

Journal of Applied Physics

Abstract:In this paper, we report on the luminescence-center (LC)-mediated excitation of Er3+ as a function of annealing temperature in Er-doped Si-rich SiO2 (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er3+ and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er3+ in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er3+ demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er3+. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er3+ ions by optimizing the density of LCs and the coupling between Er3+ and LCs.
Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Yunfeng Wu,Houwei Pang,Yuan Wang,Sichen Lin,Lei Wang,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1063/5.0223340

IF: 2.877

2024-01-01

Journal of Applied Physics

Abstract:Erbium-doped SnO2 films and devices are fabricated on silicon substrates, and the 1.54 mu m emission of erbium ions is realized via energy transfer from the SnO2 host. It is found that the luminescence intensity for SnO2:Er film can be enhanced, by increasing the optical activity and transition probability of Er3+ ions with fluorine codoping. Moreover, the device prepared by the fluorine codoped SnO2 film presents a low turn-on voltage of 1.6 V and an onset electric field of 0.18 MV/cm. The unpackaged device operated for 1028h in the atmosphere, then continued to function at 40 degrees C/30% RH during 1003 h, with less than 10% optical power attenuation. Through further optimizing the preparation process, the optimal device exhibits an optical power density of 38.5 mu W/cm(2) at 1.55 mu m, due to the improved crystalline quality together with the number of sensitizers. This work demonstrates the practical application potential in silicon-based light sources from erbium-doped SnO2 devices.

1.53µm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicates

1.53μm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicates

1.53&Amp;#x00b5;m Electroluminescence of Erbium Excited by Hot Carriers in ErRE (re=yb, Y) Silicates

Large Electroluminescence Excitation Cross Section and Strong Potential Gain of Erbium in ErYb Silicate

Near-infrared Electroluminescence in ErYb Silicate Based Light-Emitting Device

Photoluminescence Quantum Efficiency and Energy Transfer of Erre Silicate (re = Y, Yb) Thin Films

Electroluminescence from Light-Emitting Devices with Erbium-Doped Tio2 Films: Enhancement Effect of Yttrium Codoping

Photoluminescence and electroluminescence of erbium yttrium and ytterbium co-doped Er silicates

1.53νm photo-and electroluminescence from Er3+ in erbium silicate

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Room temperature Er<sup>3+</sup>1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Multicolor and Near-Infrared Electroluminescence from the Light-Emitting Devices with Rare-Earth Doped Tio2 Films

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Enhanced Luminescence of Silica Thin Films Co-Doped with Er3+ and Yb3+

Enhanced Er&lt;sup&gt;3&amp;#x002B;&lt;/sup&gt; Luminescence of Er Silicate Through Y and Yb Co-Doping

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Low Driving Voltage and High Reliability 1.54 Μm Electroluminescence from SnO2:Er/p-Si Heterostructured Devices Via Energy Transfer Effect

Enhanced Er<sup>3+</sup> Luminescence of Er Silicate Through Y and Yb Co-Doping