Abstract:Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC is almost the most popular polytype as it possesses a suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with a high barrier voltage of over several thousand volts, the minority carrier lifetime of 4H-SiC single crystals must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. These defects can be classified into a number of categories, such as triangle defect, pit, carrot, etc. This paper discusses each one individually followed by the introduction of industrially feasible methods to characterize them. Following this, the impact of surface defects on the minority carrier lifetime is analyzed and discussed. Finally, a particular emphasis is put on discussing various passivation schemes and their effects on the minority carrier lifetime of 4H-SiC single crystals. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

Cathodoluminescence Study of 3C-Sic Epilayers Grown on 4H-Sic Substrates

Surface Defects and Accompanying Imperfections in 4h–sic: Optical, Structural and Electrical Characterization

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Electron-Beam-Induced Current And Cathodoluminescence Study Of Dislocation Arrays In 4h-Sic Homoepitaxial Layers

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Defects in epitaxial 4H-SiC revealed by exciton recombination

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Surface Defects Generated by Extrinsic Origins on 4H-Sic Epitaxial-Wafers Observed by Scanning Electron Microscopy

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Electron-Beam-Induced Current Study Of Stacking Faults And Partial Dislocations In 4h-Sic Schottky Diode

Growth of 4H-Sic Epilayers with Low Surface Roughness and Morphological Defects Density on 4° Off-Axis Substrates

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films

The Evolution of H+ Implantation Induced Defects and the Different Cleavage Behaviors under Different Thermal Excitation in 4H-Sic During Crystal-Ion-Slicing Technology